超辐射发光二极管（SLD）具有高功率、宽光谱和低相干性等光学特性，在光纤通信、工业**、生物影像和痕量气体检测等领域具有极高的应用价值。本文聚焦于SLD的输出功率与光谱宽度特性，综合评述了量子阱、量子点近红外SLD与量子级联中红外SLD的研究进展。详细介绍了InP基量子短线、混合量子点量子阱与异维量子点量子阱等新型有源结构，以及量子点掺杂与区域混杂等相关工艺技术。最后，概述了SLD的应用前景，并对SLD的潜在研究方向和技术发展应用趋势进行了展望。

为优化1 310 nm超辐射发光二极管输出性能，提高器件输出功率，针对J型波导结构的1 310 nm超辐射发光二极管的波导结构参数及器件散热能力进行研究。结果表明波导刻蚀深度、弯曲角度和绝缘层厚度是影响器件实现高功率输出的重要因素。基于研究结果对超辐射发光二极管器件结构及工艺进行优化，制备出脊宽5 μm、弯曲角度8°、刻蚀深度1.7 μm、绝缘层厚300 nm的J型超辐射发光二极管。该器件在室温及500 mA连续注入电流条件下，直波导长度1.5 mm时实现10 nm宽的输出光谱，输出功率达到42.2 mW。

Visible-light communication (VLC) stands as a promising component of the future communication network by providing high-capacity, low-latency, and high-security wireless communication. Superluminescent diode (SLD) is proposed as a new light emitter in the VLC system due to its properties of droop-free emission, high optical power density, and low speckle-noise. In this paper, we analyze a VLC system based on SLD, demonstrating effective implementation of carrierless amplitude and phase modulation (CAP). We create a low-complexity memory-polynomial-aided neural network (MPANN) to replace the traditional finite impulse response (FIR) post-equalization filters of CAP, leading to significant mitigation of the linear and nonlinear distortion of the VLC channel. The MPANN shows a gain in Q factor of up to 2.7 dB higher than other equalizers, and more than four times lower complexity than a standard deep neural network (DNN), hence, the proposed MPANN opens a pathway for the next generation of robust and efficient neural network equalizers in VLC. We experimentally demonstrate a proof-of-concept 2.95-Gbit/s transmission using MPANN-aided CAP with 16-quadrature amplitude modulation (16-QAM) through a 30-cm channel based on the 442-nm blue SLD emitter.