为了实现性能优良的广视角液晶显示, 对基于负性液晶的边缘场切换模式(FFS)的穿透率、响应时间等性能参数进行了分析与优化。为了实现FFS模式高穿透率的显示, 对于影响穿透率的参数进行了仿真分析及优化选取。通过实验验证了仿真结果并且兼顾了相关参数对响应时间和穿透率的影响。相比于正性液晶的FFS模式, 参数优化使得穿透率提高了18%, 并且响应时间为26 ms, 和正性液晶相当。当其他条件相同, 像素区域的穿透率曲线面积最大时, 穿透率也是最大, 通过这种方法确定了负性液晶FFS模式的电极间距。此外, 响应时间取决于像素倾斜角与盒厚, 而与像素间距和电极的宽度距离比无关。

开发了液晶分子在双重电场作用下, 扭曲排列稳定性增强的广视角技术, 这种架构搭配负性液晶的开启响应速度略大于正性液晶, 关闭响应速度与正性液晶一致, 穿透率约提高了10%。分析了三电极作用下穿透率分别与响应时间和电压的关系, 有效地解决了FFS和IPS对广视角技术的垄断。

提高薄膜晶体管液晶显示器阵列基板的光利用效率的主要方法是提高开口率和穿透率。文章制作了低温多晶硅阵列穿透区多层膜，考察膜层以及结构对穿透率的影响，研究阵列光线穿透率提升的方法。结果表明，层间介质层（ILD）完成后不同折射率膜层接口对穿透率影响较大，平坦层（PL）的厚度对穿透率没有明显影响，导电膜氧化铟锡（ITO）厚度增加，穿透率下降。通过在阵列穿透区减少膜层数量和改变膜层组分，减少折射率差异较大的界面，可增加穿透率7%左右。

The effect of annealing condition on sputtered indium tin oxide (ITO) films on quartz with the thickness of 200 nm is characterized to show enhanced optical transparency and optimized electrical contact resistivity. The as-deposited grown ITO film exhibits only 65% and 80% transmittance at 532 and 632.8 nm, respectively. After annealing at 475 oC for 15 min, the ITO film is refined to show improved transmittance at shorter wavelength region. The transmittances of 88.1% at 532 nm and 90.4% at 632.8 nm can be obtained. The 325-nm transmittance of the post-annealed ITO film is greatly increased from 12.7% to 41.9%. Optimized electrical property can be obtained when annealing below 450 oC, leading to a minimum sheet resistance of 26 \Omega/square. Such an ITO film with enhanced ultraviolet (UV) transmittance has become an alternative candidate for applications in current UV photonic devices. The morphology and conductance of the as-deposited and annealed ITO films are determined by using an atomic force microscopy (AFM), showing a great change on the uniformity distribution with finite improvement on the surface conductance of the ITO film after annealing.