提出了一种适用于环形栅LDMOS器件的子电路宏模型。基于对环形栅LDMOS器件结构的分析, 将环形栅LDMOS器件分为两个部分, 一个是中间的条形栅MOS部分, 使用常规的高压MOS模型; 另一个是端头部分, 为一个圆环形栅极MOS器件, 采用了一个单独的模型。基于40 V BCD工艺的N沟道LDMOS器件进行模型提取与验证。结果表明, 建立的宏模型具有较强的几何尺寸缩放功能, 对于不同尺寸的器件都具有较高的拟合精度, 并且模型能够兼容当前主要的商用电路仿真器Hspice和Spectre。

A Spice sub-circuit macro model for annular gate LDMOS is presented. The macro model divided the annular gate LDMOS into two parts based on its structure. The middle part of annular gate LDMOS was a conventional LDMOS transistor whit rectangle gate. The terminal part was an annular gate LDMOS, and it was modeled individually. The macro model was verified by the N channel LDMOS in a 40 V BCD process. The results show that the macro model has good ability of geometry scaling and it can fit the characteristics curves of different size devices exactly. The macro model is compatible with commercial circuit simulator Hspice and Spectre.