为解决硫化过程中Sn元素损失的问题以及减少MoS2的厚度，采用磁控溅射技术，在基于钼的钠钙玻璃衬底上采用双周期溅射的方法，以ZnO/SnO2/Cu的顺序制备了含氧的Cu-Zn-Sn预制层。结果表明：SnO2以及ZnO的使用很好的抑制了Sn元素的损失以及MoS2层的形成，而且在590 ℃的硫化温度下能制备出表面平整、晶粒致密、晶体结构较好的单相Cu2ZnSnS4 (CZTS)吸收层薄膜。最后，制备出结构完整的CZTS薄膜太阳电池，在590 ℃硫化制备的CZTS薄膜太阳电池效率最高，其开路电压为590 mV，短路电流密度为22.09 mA/cm2，填充因子为39.28%，光电转换效率达到5.12%，为今后制备高效CZTS薄膜太阳电池起到了推动作用。

In order to solve a problem of Sn-loss and reduce the thickness of MoS2 during the sulfurization process, the oxygen containing Cu-Zn-Sn precursor thin films were prepared on Mo-coated soda lime glasses via magnetron sputtering ZnO/SnO2/Cu. The results show that the Sn-loss and the formation of MoS2 are well inhibited by the utilization of SnO2 and ZnO. The single-phase CZTS absorbed thin films with the smooth surface, dense grains and good crystal structure can be prepared at 590 ℃. Also, the CZTS solar cells from oxygen containing precursors annealed at 590 ℃ have an optimum power conversion efficiency (PCE) of 5.12% with an open circuit voltage of 590 mV, a short circuit current density of 22.09 mA/cm2 and a fill factor of 39.28%.