为提高1342 nm 分布反馈（Distributed Feedback, DFB）半导体激光器的输出功率，设计了三种腔面膜膜系组合。采用电子束蒸发镀膜技术对该激光器进行了腔面镀膜，并测试了其在三种膜系组合下的输出功率。结果表明，采用增透膜为基底(Sub)/Al2O3/Ta2O5/空气(Air)、高反膜为Sub/(Al2O3/Si)3Al2O3/Air的腔面膜膜系组合时，激光器的输出功率最高。前腔面反射率为02%，后腔面反射率为986%。在260 mA的直流电流下，平均输出功率达到了85 mW以上（增加了856%），斜率效率提升了829%。通过采用此膜系组合进行激光器腔面镀膜，可以大幅提升1342 nm DFB半导体激光器的输出功率。

In order to improve the output power of 1342 nm distributed feedback (DFB) semiconductor laser, three kinds of cavity surface film combinations are designed in this paper. Electron beam evaporation coating technology is used to coat the cavity surface of the laser, and the output power of the laser under three kinds of film combinations is tested. The results show that the highest output power of 1342 nm DFB semiconductor laser is obtained by using the combination of cavity surface film system (antireflective film: Sub/Al2O3/Ta2O5/Air, high reflection film: Sub/(Al2O3/Si)3Al2O3/Air). The reflectance of the anterior cavity surface is 02%, and that of the posterior cavity surface is 986%. At 260 mA DC, the average output power reaches more than 85 mW (an increase of 856%), and the slope efficiency increases by 829%. The output power of the laser can be greatly improved by coating the cavity surface of the laser with this combination of film systems.