本文主要对低压化学气相沉积(LPCVD)法制备N型高效晶硅隧穿氧化层钝化接触(TOPCon)电池工艺进行研究。分析LPCVD法制备隧穿氧化层及多晶硅层的影响因素，研究了不同氧化层厚度、多晶硅厚度及多晶硅层中P掺杂量对太阳能电池转换效率的影响。结果表明：当隧穿氧化层厚度在1.55 nm时，钝化效果最佳；多晶硅层厚度120 nm时Voc达到最高值；多晶硅层厚度在90 nm时Eff最高。当P掺杂量为3.0×1015 cm-2时可获得较高的Voc，原因是随着P掺杂量的增加，多晶硅层场钝化效果提高。

This paper mainly studies the preparation process of N-type high-efficient crystalline silicon tunnel oxide passivated contact (TOPCon) cells by low pressure chemical vapor deposition (LPCVD) method. The influencing factors of the preparation of tunnel oxide layer and polycrystalline silicon layer by LPCVD were studied and analyzed. The effects of different oxide layer thickness, polysilicon thickness and polysilicon doping amount on the efficiency were studied. The results show that: the thickness of tunneling oxide layer of 1.55 nm shows the best passivation effect; the Voc reaches the highest value when the thickness of polysilicon layer is 120 nm; the Eff reaches the highest when the thickness of polysilicon layer is 90 nm. The field passivation effect of polysilicon layer increases with the increase of P doping concentration. Higher Voc can be obtained when the P doping concentration is 3.0×1015 cm-2.