随着太赫兹技术、低温电子学和射电天文学的发展, 对可低温环境下工作的集成封装式跨阻放大芯片的需求增加。本文针对一种 Ge-Si基底型跨阻放大器, 主要研究了其深低温环境下的电学性能, 获得了 8K温度下放大器芯片的典型端口电流-电压特性曲线和增益曲线, 得到了在 0.1~3 GHz频带内较为平坦的增益效果; 为了验证其对太赫兹光电信号的放大功能, 将该跨阻放大器与太赫兹量子阱探测器集成封装, 并搭建了太赫兹脉冲激光探测系统, 在 8K温度下实现了对脉宽 2 μs太赫兹光电探测信号的有效放大, 跨阻增益约 560 Ω, 电流放大增益为 1.78 mA/V。上述研究成果首次验证了商用跨阻放大器在深低温环境下应用的可行性, 为太赫兹高速探测与高频通信领域的集成跨阻放大提供了一种有效技术手段。

With the development of terahertz technology, low-temperature electronics and radio astronomy, the demand for integrated transimpedance amplifier chips working in low-temperature environment increases. The electrical performance of a Ge-Si based transimpedance amplifier in deep low temperature environment is studied. The current-voltage curves of the typical ports and gain curve of the amplifier chip at 8 K, and a relatively flat gain effect in the 0.1 GHz-3 GHz band are obtained. In order to verify its amplification function of terahertz photoelectric signal, GN1068 is integrated with terahertz Quantum-Well Photodetector(QWP), and a terahertz pulse laser detection system is built. A photoelectric signal, with a pulse width of 2 μs, is successfully amplified at 8 K. The transimpterahertzedance gain is about 560 Ω. The current amplification gain is 1.78 mA/V. The above results verify the feasibility of commercial transimpedance amplifier in deep low temperature environment for the first time, and provide an effective technical means for integrated transimpedance amplifier in the field of terahertz high-speed detection and high-frequency communication.