Journal of Semiconductors, 2023, 44 (8): 082001, Published Online: Sep. 21, 2023
Pressure manipulation of ultrafast carrier dynamics in monolayer WS2
two-dimensional transition metal dichalcogenides hydrostatic pressure carrier dynamics band structure ultrafast spectroscopy
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) have intriguing physic properties and offer an exciting platform to explore many features that are important for future devices. In this work, we synthesized monolayer WS2 as an example to study the optical response with hydrostatic pressure. The Raman results show a continuous tuning of the lattice vibrations that is induced by hydrostatic pressure. We further demonstrate an efficient pressure-induced change of the band structure and carrier dynamics via transient absorption measurements. We found that two time constants can be attributed to the capture process of two kinds of defect states, with the pressure increasing from 0.55 GPa to 2.91 GPa, both of capture processes were accelerated, and there is an inflection point within the pressure range of 1.56 GPa to 1.89 GPa. Our findings provide valuable information for the design of future optoelectronic devices.
Yao Li, Haiou Zhu, Zongpeng Song. Pressure manipulation of ultrafast carrier dynamics in monolayer WS2[J]. Journal of Semiconductors, 2023, 44(8): 082001.