以Pb(Ni1/3Nb2/3)O3-Pb(Zr0.41Ti0.59)O3(PNN-PZT)为基础体系, 通过对烧结助剂x%CuO(质量比)和y%LiBiO2(质量比)的质量进行调节, 对陶瓷样品的相结构、微观组织形貌及电学性能进行了分析, 阐述了助烧剂对陶瓷样品性能的影响。结果发现, 在温度940~960 ℃下陶瓷烧结成瓷, 且晶粒长大较充分。当x =0.2, y =1时, 陶瓷样品的电学性能最优, 即此时压电常数d33 =608 pC/N, 机电耦合系数kp=0.65, 介电损耗tan δ =2.19%, 介电常数εr=3 843。采用烧结助剂质量比x=0.2,y=1的粉体制备7 mm×7 mm×36 mm的叠层压电驱动器, 然后进行微观组织形貌和位移特性研究。叠层压电驱动器断面微观结构表明, 电极层与陶瓷层粘接紧密, 无裂缝或间隙产生。位移的测试结果表明, 随着电压的增加, 位移也在逐渐增加, 在驱动电压为150 V时, 其最大位移为46.280 μm, 位移增大的同时, 迟滞逐渐降低。

Using the Pb(Ni1/3Nb2/3)O3-Pb(Zr0.41Ti0.59)O3(PNN-PZT) as the basic system, the phase structure, microstructure and electric properties of PNN-PZT ceramic samples are analyzed by adjusting the mass of sintering aids CuO (x%) and LiBiO2 (y%) according to the mass ratio, and the effects of sintering aids on the ceramic samples are discussed. The results show that the ceramics are sintered into ceramics at 940-960 ℃, and the grain growth is more adequate. When x=0.2, y=1, the ceramic samples have optimal electric properties with piezoelectric constant d33 of 608 pC/N, electromechanical coupling coefficient kp of 0.65, dielectric loss tan δ of 2.19%, and dielectric constant εr of 3 843. A stacked piezoelectric actor with size of 7 mm×7 mm×36 mm is prepared by using the ceramic powders with the sintering aids mass ratio of x=0.2 and y=1, and its microstructure morphology and displacement characteristics are investigated. The cross-sectional microstructure of stacked piezoelectric actuator shows that the electrode layer was closely bonded to the ceramic layer and no cracks and gaps are created. The displacement test results show that with the increase of voltage, the displacement also gradually increases, and the maximum displacement is 46.280 μm at 150 V.As the displacement increases, the hysteresis decreases gradually.