压电与声光, 2022, 44 (4): 502, 网络出版: 2022-10-29   

低温烧结压电陶瓷驱动器用材料特性研究

Study on Properties of Low Temperature Sintered Piezoelectric Ceramic Material for Actuator
作者单位
1 中国振华集团新云电子元器件有限责任公司,贵州 贵阳 550025
2 贵州振华红云电子有限公司, 贵州 贵阳 550025
3 贵州大学 材料与冶金学院, 贵州 贵阳 550025
摘要
以Pb(Ni1/3Nb2/3)O3-Pb(Zr0.41Ti0.59)O3(PNN-PZT)为基础体系, 通过对烧结助剂x%CuO(质量比)和y%LiBiO2(质量比)的质量进行调节, 对陶瓷样品的相结构、微观组织形貌及电学性能进行了分析, 阐述了助烧剂对陶瓷样品性能的影响。结果发现, 在温度940~960 ℃下陶瓷烧结成瓷, 且晶粒长大较充分。当x =0.2, y =1时, 陶瓷样品的电学性能最优, 即此时压电常数d33 =608 pC/N, 机电耦合系数kp=0.65, 介电损耗tan δ =2.19%, 介电常数εr=3 843。采用烧结助剂质量比x=0.2,y=1的粉体制备7 mm×7 mm×36 mm的叠层压电驱动器, 然后进行微观组织形貌和位移特性研究。叠层压电驱动器断面微观结构表明, 电极层与陶瓷层粘接紧密, 无裂缝或间隙产生。位移的测试结果表明, 随着电压的增加, 位移也在逐渐增加, 在驱动电压为150 V时, 其最大位移为46.280 μm, 位移增大的同时, 迟滞逐渐降低。
Abstract
Using the Pb(Ni1/3Nb2/3)O3-Pb(Zr0.41Ti0.59)O3(PNN-PZT) as the basic system, the phase structure, microstructure and electric properties of PNN-PZT ceramic samples are analyzed by adjusting the mass of sintering aids CuO (x%) and LiBiO2 (y%) according to the mass ratio, and the effects of sintering aids on the ceramic samples are discussed. The results show that the ceramics are sintered into ceramics at 940-960 ℃, and the grain growth is more adequate. When x=0.2, y=1, the ceramic samples have optimal electric properties with piezoelectric constant d33 of 608 pC/N, electromechanical coupling coefficient kp of 0.65, dielectric loss tan δ of 2.19%, and dielectric constant εr of 3 843. A stacked piezoelectric actor with size of 7 mm×7 mm×36 mm is prepared by using the ceramic powders with the sintering aids mass ratio of x=0.2 and y=1, and its microstructure morphology and displacement characteristics are investigated. The cross-sectional microstructure of stacked piezoelectric actuator shows that the electrode layer was closely bonded to the ceramic layer and no cracks and gaps are created. The displacement test results show that with the increase of voltage, the displacement also gradually increases, and the maximum displacement is 46.280 μm at 150 V.As the displacement increases, the hysteresis decreases gradually.
参考文献

[1] AHN C W,NOH S Y,NAHM S,et al.Low-temperature sintering and piezoelectric properties of ZnO-added 0.41Pb(Ni1/3Nb2/3)O3-0.36PbTiO3-0.23PbZrO3 ceramics[J].Jpn J Appl Phys,2003,42(9A):5676-5680.

[2] JEONG Y,YOO J,LEE S,et al.Piezoelectric characteristics of low temperature sintering Pb (Mn1/3Nb2/3)O3-Pb (Ni1/3Nb2/3)O3-Pb (Zr0.50Ti0.50)O3 according to the addition of CuO and Fe2O3[J].Sensors & Actuators A Physical,2007,135(1):215-219.

[3] HAYASHI T,INOUE T,AKIYAMA Y.Low-temperature sintering and properties of (Pb,Ba,Sr)(Zr,Ti,Sb)O3 piezoelectric ceramics using sintering aids[J].Jpn J Appl Phys,2014,38(9):5549-5552.

[4] CHU S Y,HSIEH C S.Doping effects on the piezoelectric properties of low-temperature sintered PNN-PZT-based ceramics[J].Journal of Materials Science Letters,2000,19:609-612.

[5] YOO J,LEE C,JEONG Y,et al.Microstructural and piezoelectric properties of low temperature sintering PMN-PZT ceramics with the variations of sintering times[J].Materials Chemistry & Physics,2005,90(2/3):386-390.

[6] 董敦灼,陈旭明.低温烧结PZT压电陶瓷材料[J].电子元件与材料,1989,8(1):58-60.

[7] 朱福莉.低温共烧PZT基压电陶瓷的研究及多层器件的制备[D].南京:南京航空航天大学,2015.

[8] 刘相果,刘光聪,曾祥明,等.低温共烧PSN-PZT压电陶瓷的研究[J].压电与声光,2008,40(1):29-31.

[9] GUO Y,MA W,WANG M,et al.Properties of 0.015PSN-0.3PNN-0.685PZT ceramics near morphotropic phase boundary[J].Materials Letters,2015,159(15):126-130.

[10] LEVASSORT F,TRAN-HUU-HUE P,RINGAARD E,et al.High-frequency and high-temperature electromechanical performances of new PZT-PNN piezoceramics[J].Journal of the European Ceramic Society,2001,21(10/11):1361-1365.

[11] WITTMER D E,BUCHANAN R C.Low-temperature densification of lead zirconate titanate with vanadium pentoxide additive[J].Am Ceram Soc,1981,64(8):485-490.

[12] 陈伟业,刘彭义,林彩平,等.SiO2对低温烧结压电陶瓷PMNNS的性能影响[J].人工晶体学报,2012,41(1):141-145.

[13] 何杰,孙清池.SiO2对低温烧结PMSZT压电陶瓷性能的影响[J].压电与声光,2008,30(2):224-227.

[14] YAMAMURA H, KURAMOTO S, HANADA H, et al.Prepation of Pb(Zr,Ti)O3 through the use of capferron[J].J Am Ceram Soc,1984,67(1):1-3.

[15] CHENG S Y,FU S L,WEI C C.Low-temperature sintering of PZT ceramics[J].Ceramics International,1987,13(4):223-231.

[16] 侯伟,李建华.低温烧结CuO改性PZT压电陶瓷性能研究[J].电子元件与材料,2011,30(8):16-19.

[17] 张冠杰,杨豪,张楠.利用X射线衍射技术对压电材料本征与非本征起源探究的研究进展[J].物理学报,2020,69(12):18.

张静, 李正权, 褚涛, 李慧琴, 江平, 郭亚雄. 低温烧结压电陶瓷驱动器用材料特性研究[J]. 压电与声光, 2022, 44(4): 502. ZHANG Jing, LI Zhengquan, CHU Tao, LI Huiqin, JIANG Ping, GUO Yaxiong. Study on Properties of Low Temperature Sintered Piezoelectric Ceramic Material for Actuator[J]. Piezoelectrics & Acoustooptics, 2022, 44(4): 502.

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