本文设计并制备了一款分辨率为1 920×1 080的氮化镓基Micro-LED芯片。采用单次ICP（Inductively Coupled Plasma）刻蚀的方法完成电流扩展层的图案化和台面刻蚀，实现了电流扩展层和台面的自对准。同时，在制作过程中用HMDS（Hexamethyldisiloxane）提高光刻胶附着力，从根本上提高小尺寸台面刻蚀的一致性和完整性。此外，通过垫高N型电极解决了传统倒装芯片中P型电极和N型电极不等高的问题，有利于显示芯片与驱动芯片的键合。该芯片尺寸为17.78 mm（0.7 in），发光单元尺寸为6 μm，像素周期为8 μm，像素密度达到3 129 PPI。I-V测试数据表明，所制备的Micro-LED的开启电压仅为3.5 V。

The fabrication of a high-resolution 1 920×1 080 active matrix GaN-based micro-display chip was presented in this paper. The patterning of the current spreading layer and mesa were completed with ICP (Inductively Coupled Plasma) dry etching in a single step, resulting in the so-called self-alignment processing. At the same time, HMDS (Hexamethyldisiloxane) was used to improve the adhesion of photoresist, that significantly improve the consistency and integrity of small-size mesa etching. Furthermore, the problem of unequal height of P-electrode and N-electrode in traditional flip-chip was solved by padding the N-electrode, which was beneficial to the bonding of display chip and driver chip. This chip had a size of 17.78 mm (0.7 in), a mesa size of 6 μm and a pixel pitch of 8 μm, and a high density of 3 129 PPI. The I-V curve of a single Micro-LED pixel was measured and illustrated, which showed a turn-on voltage of 3.5 V.