用激光微细加工制作平面型InGaAs/InP PIN光探测器
[1] Bach H G, Beling S, Mekonnen G G, et al. Design and fabrication of 60-Gb/s Inp-based monolithic photoreceiver OEICs and modules[J].IEEE Journal of Selected Topics in Quantum Electronics, 2002, 8(6): 1445-1450.
[2] Shimizu N, Murata K, Hirano A, et al. 40-Gbit/s monolithic digital OEIC composed of unitravelling-carrier photodiode and InP HEMTs[J]. Electronics Letters, 2000, 36(14): 1220-1221.
[3] Skirimshire C P, Farr J R, Sloan D F, et al. Reliability of mesa and planar InGaAs PIN photodiodes[A]. IEE Proceedings[C]. 1990, 136(1): 74-78.
[4] Wang G, Yoneda Y, Hanawa I, et al. Highly reliable high performance waveguide-integrated InP/InGaAs PIN photodiodes for 40 Gbit/s fibre-optical communication application[J]. Electronics Letters, 2003, 39(15) : 1147-1149.
[5] 叶玉堂.激光微细加工[M].成都:电子科技大学出版社,1995.
Ye Y T.Laser assisted microprocessing.Chengdu:Press of University ofElectronic Science and Technology, 1995.
[6] 李忠东,叶玉堂,洪永和,等.连续波激光诱导扩散区温度的不接触测量[J].应用科学学报,1997,15(4):413-417.
Li Z D,Ye Y T,Hong Y H, et al. Remote sensing of the temperature of the exposed region in laser assisted diffusion. Journal of Applied Sciences, 1997,15(4): 413-417.
吴云峰, 廖云, 叶玉堂, 焦世龙, 张雪琴. 用激光微细加工制作平面型InGaAs/InP PIN光探测器[J]. 强激光与粒子束, 2005, 17(1): 13. WU Yun-feng, LIAO Yun, YE Yu-tang, JIAO Shi-long, ZHANG Xue-qin. Fabrication of planar InGaAs/InP PIN photodiodes using laserssisted microprocessing[J]. High Power Laser and Particle Beams, 2005, 17(1): 13.