直流磁控溅射生长(002)择优取向AlN薄膜及其光致发光
[1] KALE A,BRUSA R S,MIOTELLO A. Structural and electrical properties of AlN films deposited using reactive RF magnetron sputtering for solar concentrator application [J]. Appl. Surf. Sci., 2012,258(8):3450-3454.
[2] 杨家乐,沈鸿烈,邢正伟,等. 氮气流量对磁控溅射AlN薄膜光学性能的影响 [J]. 半导体技术, 2017,42(1):32-36.
YANG J L,SHEN H L,XING Z W,et al.. Influence of the nitrogen flow rate on the optical properties of AlN thin films deposited by magnetron sputtering [J]. Semicond. Technol., 2017,42(1):32-36. (in Chinese)
[3] LEI F F,LEI X,YE Z T,et al.. Photoluminescent properties of AlN∶Mn2+phosphors [J]. J. Alloys Compd., 2018,763:466-470.
[4] YUAN Y M,ZUO R,MAO K K,et al.. Adsorption properties of AlN on Si(Ⅲ) surface:a density functional study [J]. Appl. Surf. Sci., 2018,436:50-57.
[5] 薛守迪,杨成韬,解群眺,等. 衬底温度对AIN薄膜结构及电阻率的影响 [J]. 压电与声光, 2011,33(3):475-478.
XUE S D,YANG C T,XIE Q T,et al.. Effect of substrate temperature on structure and resistivity of AIN thin films [J]. Piezoelectrics Acoustooptics, 2011,33(3):475-478. (in Chinese)
[6] LEGRAND J,PIGEAT P,EASWARAKHANTHAN T,et al.. Structural and optical properties of magnetron-sputtered Er-doped AlN films grown under negative substrate bias [J]. Appl. Surf. Sci., 2014,307:189-196.
[7] 黄科. 蓝宝石衬底上高质量AlN材料的制备 [J]. 微纳电子技术, 2018,55(2):143-147.
HUANG K. Preparation of high quality AlN materials on the sapphire substrate [J]. Micronanoelectr. Technol., 2018,55(2):143-147. (in Chinese)
[8] ZANG Y,LI L B,REN Z Q,et al.. Characterization of AlN thin film prepared by reactive sputtering [J]. Surf. Interface Anal., 2016,48(10):1029-1032.
[9] WANG W L,YANG W J,LIU Z L,et al.. Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(Ⅲ) substrates by pulsed laser deposition [J]. Sci. Rep., 2015,5:11480-1-12.
[10] RIAH B,AYAD A,CAMUS J,et al.. Textured hexagonal and cubic phases of AlN films deposited on Si (100) by DC magnetron sputtering and high power impulse magnetron sputtering [J]. Thin Solid Films, 2018,655:34-40.
[11] LIU H Y,TANG G S,ZENG F,et al.. Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature [J]. J. Cryst. Growth, 2013,363:80-85.
[12] IMRAN S,YUAN J,YIN G,et al.. Influence of metal electrodes on c-axis orientation of AlN thin films deposited by DC magnetron sputtering [J]. Surf. Interface Anal., 2017,49(9):885-891.
[13] TAURINO A,SIGNORE M A,CATALANO M,et al.. (101) and (002) oriented AlN thin films deposited by sputtering [J]. Mater. Lett., 2017,200:18-20.
[14] ALIZADEH M,GOH B T,PANDEY A K,et al.. Low-RF-power growth of InN thin films by plasma-assisted reactive evaporation with a localized ion source [J]. Mater. Chem. Phys., 2017,199:408-415.
[15] 高扬,许绍俊,谌青青,等. 溅射功率对AlN薄膜结构形貌的影响 [J]. 压电与声光, 2012,34(2):276-278.
GAO Y,XU S J,CHEN Q Q,et al.. Effect of sputtering power on crystal structure morphology in AlN thin films [J]. Piezoelectrics Acoustooptics, 2012,34(2):276-278. (in Chinese)
[16] 余志明,刘丹瑛,魏秋平,等. 氮气含量对射频磁控溅射法制备的AlN薄膜微观结构与力学性能的影响 [J]. 粉末冶金材料科学与工程, 2014,19(1):101-107.
YU Z M,LIU D Y,WEI Q P,et al.. Effect of nitrogen concentration on microstructure and mechanical properties of reactive radio frequency magnetron sputtered AlN thin films [J]. Mater. Sci. Eng. Powder Metal., 2014,19(1):101-107. (in Chinese)
[17] CHICHIBU S F,HAZU K,ISHIKAWA Y,et al.. Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements [J]. Appl. Phys. Lett., 2013,103(14):142103-1-5.
[18] SEDHAIN A,LIN J Y,JIANG H X. Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN [J]. Appl. Phys. Lett., 2012,100(22):221107-1-4.
[19] PETIT S,JONES R,SHAW M J,et al.. Electronic behavior of rare-earth dopants in AlN:a density-functional study [J]. Phys. Rev. B, 2005,72(7):073205-1-4.
[20] KOPPE T,HOFSSS H,VETTER U. Overview of band-edge and defect related luminescence in aluminum nitride [J]. J. Lumin., 2016,178:267-281.
[21] YUWEN M H,LIU J Q,XIA C,et al.. Novel single-host Al1-xSixCxN1-x∶Mn2+white phosphors for field emission displays [J]. J. Mater. Sci:Mater. Electron., 2017,28(12):8405-8413.
[22] CAO Y G,CHEN X L,LAN Y C,et al.. Blue emission and Raman scattering spectrum from AlN nanocrystalline powders [J]. J. Cryst. Growth, 2000,213(1-2):198-202.
吕伟, 刘俊, 赵鹏宇, 李健亮, 李思达, 沈龙海. 直流磁控溅射生长(002)择优取向AlN薄膜及其光致发光[J]. 发光学报, 2019, 40(6): 719. LYU Wei, LIU Jun, ZHAO Peng-yu, LI Jian-liang, LI Si-da, SHEN Long-hai. (002) Preferred Oriented AlN Films Grown by DC Magnetron Sputtering and Photoluminescence[J]. Chinese Journal of Luminescence, 2019, 40(6): 719.