高压SOI pLDMOS总剂量辐射致BV退化研究

对高压SOI pLDMOS器件总剂量辐射效应进行了研究。分析了不同偏置条件下器件击穿电压的退化机理,并使用TCAD在不同氧化层界面引入固定陷阱电荷,仿真了电离辐射总剂量效应。结果表明,总剂量辐射在FOX和BOX引入辐射陷阱电荷QBOX和QFOX。QFOX增加了漏极附近横向电场,降低了埋氧层电场,使击穿位置由体内转到表面,导致击穿电压退化。QBOX降低了埋氧层电场,降低了埋氧层压降,导致击穿电压退化。

Abstract

The total-ionizing-dose radiation effect in high voltage SOI pLDMOS devices was studied. The degradation mechanism of breakdown voltage under different bias conditions was analyzed, fixed trap charges were introduced at the interface of different oxide layers using TCAD， and the effect of the total ionizing radiation dose was simulated. The results showed that the total dose radiation introduced radiation trap charges QBOX and QFOX at FOX and BOX. The QFOX elevated the transverse electric field near the drain and reduced the buried oxide electric field, shifting the breakdown location from the body to the surface, and leading to degradation of the breakdown voltage. The QBOX reduced the buried oxide electric field and reduced the buried oxide voltage drop, leading to degradation of the breakdown voltage.

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黄柯月, 吴中华, 周淼, 陈伟中, 王钊, 周锌. 高压SOI pLDMOS总剂量辐射致BV退化研究[J]. 微电子学, 2022, 52(4): 706. HUANG Keyue, WU Zhonghua, ZHOU Miao, CHEN Weizhong, WANG Zhao, ZHOU Xin. Study on Total-Ionizing-Dose Radiation Induced BV Degradation of High Voltage SOI pLDMOS[J]. Microelectronics, 2022, 52(4): 706.

高压SOI pLDMOS总剂量辐射致BV退化研究

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