利用n型有机半导体材料N2200掺杂在p型有机半导体材料PDVT‑10中形成捕获中心而能够表现出突触行为的特性，结合银金属作为源电极与有机半导体PDVT‑10接触形成的金属‑半导体结来引入肖特基势垒，从而使其限制有机突触器件的源漏电流，最终降低器件工作能耗。此外，器件表现出生物突触行为时的工作电流均在10^-10 A量级，如兴奋性突触后电流等基础的突触行为。研究方案为构建类脑水平的神经形态计算网络提供了一种简单高效的策略。

In the study， n-type organic semiconductor material N2200 was doped in p-type organic semiconductor material PDVT-10 to form a trapping center with synaptic characteristics. Metal semiconductor junction formed by contact between organic semiconductor PDVT-10 and silver metal as the source electrode was combined to introduce Schottky barrier， so as to limit the source-drain current of organic synaptic devices， and finally reduce device energy consumption. In addition， the operating current of the devices exhibiting biological synaptic behavior was on the order of 10^-10 A， such as excitatory postsynaptic current and other basic synaptic behavior. The scheme has provided a simple and efficient strategy for constructing brain-like neuromorphic computing networks.