相较于传统的硅材料, 宽禁带半导体材料更适合制作高压、高频、高功率的半导体器件, 被认为是后摩尔时代材料创新的关键角色。单晶金刚石拥有大禁带宽度、高热导率、高迁移率等优异特性, 更是下一代大功率、高频电子器件的理想半导体材料。然而由于可获得单晶金刚石的尺寸较小, 且价格昂贵, 极大地阻碍了金刚石的发展。历经长时间的探索, 异质外延生长技术成为了获得高质量、大面积单晶金刚石的有效手段。本综述从金刚石异质外延的衬底选择、生长机理以及质量改善等方面对近些年来异质外延单晶金刚石的发展进行详细介绍。进一步地, 对基于异质外延单晶金刚石的场效应晶体管和二极管的研究进行了总结, 说明了异质外延单晶金刚石在电子器件领域的巨大潜力。最后总结了异质外延单晶金刚石仍需面对的挑战, 展望了其在未来的应用与发展前景。

Compared with traditional silicon materials, wide-band gap semiconductors are more suitable for making high voltage, high-frequency and high-power semiconductor devices, and are considered to be the key role of material innovation in the post-Moore era. Single-crystal diamond (SCD) has superiorities of wide-band gap, extremely high thermal conductivity and high mobility, and is expected to develop high-power, high-frequency electronic devices. However, the limitation of SCD wafer size and ultra-expensive price obstructed its promotion. After a long-time exploration, heteroepitaxy technology is recognized as an effective approach to obtain high-quality and large-size SCD wafer. This review introduces the development of heteroepitaxial SCD in detail, in aspects of substrate selection, growth mechanism and quality improvement. Furthermore, the investigations of field-effect transistors and diodes based on heteroepitaxial SCD are summarized, indicating the great potential of heteroepitaxial SCD in electronic device field. Finally, the challenges of heteroepitaxial technology are pointed out, and the potential applications are anticipated.