AuGe/Au与GaAs退火处理特性研究

肖和平; 朱迪

doi:doi:10.3969/j.issn.1007-5461. 2018.06.013

量子电子学报, 2018, 35 (6): 730, 网络出版: 2018-12-26

AuGe/Au与GaAs退火处理特性研究

Properties of AuGe/Au on GaAs annealing treatment

论文大纲

肖和平 ^*朱迪

作者单位

扬州乾照光电有限公司, 江苏扬州 225101

光电子学 AuGe合金退火处理欧姆接触结合能 optoelectronics AuGe alloy GaAs GaAs annealing treatment Ohmic contact bonding energy

摘要

AuGe合金具有接触电阻低与GaAs衬底粘附性好等特点,广泛应用于金属/半导体(M/S)器件中以形成欧姆接触。在GaAs表面蒸镀AuGe/Au材料,经不同温度快速热退火后,使用扫描电子显微镜(SEM)、 X射线光电子能谱分析仪(XPS)和X射线衍射仪对样品欧姆接触的界面特性进行了分析。随着退火温度的升高,接触电阻呈现V型趋势, AuGe部分分解, Au、Ge向GaAs界面扩散, Ga、As向金属层扩散,金属表层出现暗灰色孔状物,主要成分为AuGa、AuGaAs等,此外Ge、Ga的结合能增加0.3～0.6 eV, Ga3+、Ge4+高价态的占比增加, Ge含量为10%的材料作为n-GaAs接触电极,退火温度在380～420 °C 之间可使其形成良好的欧姆接触。

Abstract

AuGe alloy has the characteristics of low contact resistance and good adhesion to GaAs substrate. It is widely used in metal/semiconductor (M/S) devices to form Ohmic contact. AuGe/Au material is deposited on GaAs surface, after rapid thermal annealing at different temperatures, the interfacial characteristics of Ohmic contact of the samples are analyzed by using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and X-ray diffractometer. With the increase of annealing temperature, the contact resistance shows a V-type trend. AuGe is partially decomposed. Au and Ge diffuse into the GaAs interface. Ga and As diffuse into the metal layer. The dark gray pores appear in the metal surface, and the main components are AuGa, AuGaAs etc. The bonding energy of Ge and Ga can increase 0.3～0.6 eV. The proportion of Ga3+ and Ge4+ increase, and the materials containing 10% Ge is selected as n-GaAs contact electrode. Excellent ohmic contact can be formed when the annealing temperature ranges from 380 °C to 420 °C.

参考文献

[1] Murskami M. Development of refractory ohmic contact materials for gallium arsenide compound semiconductors ［J］. Science and Technology of Advanced Materials, 2012, 3(1): 1-27.

[2] Yao Huilin, Lu Gang, Song lijun, et al. Performance improvement of LED optoelectronic devices ［J］. Chinese Journal of Quantum Electronics (量子电子学报), 2016, 33(3): 301-305 (in Chinese).

[3] Zhang Daqing, Li Guobin, Chen Changshui. Relationship between barrier height of single quantum well InGaN/GaN and LED photoelectric performance ［J］. Chinese Journal of Quantum Electronics (量子电子学报), 2014, 31(1): 107-115 (in Chinese).

[4] Lin H C, Senanayake S, Cheng K Y, et al. Optimization of AuGe-Ni-Au ohmic contacts for GaAs MOSFETs ［J］. IEEE Transactions on Electron Devices, 2003, 50(4): 880-885.

[5] Xiao Heping, Wang Yu, Guo Guanjun, et al. Analysis of Au/AuBe/Au on GaP structure after rapid thermal annealing ［J］. Semiconductor Technology (半导体技术), 2017, 42(4): 293-299 (in Chinese).

[6] Koop E J, Iqbal M J, Limbach F, et al. The annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1-xAs heterostructures ［J］. Semiconductor Science and Technology, 2013, 28(2): 273.

[7] Zhang Wanrong, Li Zhiguo, Mu Fuchen, et al. Reliability of n-GaAs ohmic contact with TiN diffusion barrier ［J］. Journal of Semiconductors (半导体学报), 2000, 21(6): 608-613 (in Chinese).

[8] Swenson D, Jan C H, Chang Y A. The formation of ohmic and Schottky enhanced contacts to III-V compound semiconductors via the exchange mechanism: A combined thermodynamic and kinetic model ［J］. Journal of Applied Physics, 1998, 84(8): 4332-4342.

[9] Gunapala S D, et al. Quantum well infrared photodetector technology and applications ［J］. IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20(6): 154-165.

[10] Baer D R, Engelhard M H. XPS analysis of nanostructured materials and biological surfaces ［J］. Journal of Electron Spectroscopy and Related Phenomena, 2009, 178: 415-432.

[11] Ghods P, Isgor O B, Brown J R, et al. XPS depth profiling study on the passive oxide film of carbon steel in saturated calcium hydroxide solution and the effect of chloride on the film properties ［J］. Applied Surface Science, 2010, 257(10): 4669-4677.

[12] Fewster P F. Advances in the structural characterization of semiconductor crystals by X-ray scattering methods ［J］. Progress in Crystal Growth and Characterization of Materials, 2014, 48-49: 245-273.

[13] Tan H H, Lever P, Jagadish C. Growth of highly strained InGaAs quantum wells on GaAs substrates-effect of growth rate ［J］. Journal of Crystal Growth, 2004, 274(1): 85-89.

肖和平, 朱迪. AuGe/Au与GaAs退火处理特性研究[J]. 量子电子学报, 2018, 35(6): 730. XIAO Heping, ZHU Di. Properties of AuGe/Au on GaAs annealing treatment[J]. Chinese Journal of Quantum Electronics, 2018, 35(6): 730.

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