硅酸盐学报, 2022, 50 (9): 2366, 网络出版: 2022-12-26
SiO2掺杂对ZnO-Bi2O3基压敏陶瓷电学性能的影响
Effect of SiO2 Doping on Electrical Properties of ZnO-Bi2O3 Based Varistor Ceramics
二氧化硅 氧化锌 压敏陶瓷 晶界势垒 非线性系数 电容-电压特性法 silicon dioxide zinc oxide varistor ceramics Schottky barrier nonlinear coefficient capacitance-voltage characteristic method
摘要
在ZnO-Bi2O3-MnO2-Cr2O3基础上掺杂不同含量的SiO2,采用传统固相烧结法制备ZnO压敏陶瓷。采用X射线衍射仪、扫描电子显微镜研究了ZnO压敏陶瓷的物相组成和微观结构。利用数字源表、电感电容电阻测试仪测试并分析其电学性能。利用电容-电压特性法测试其晶界参数。结果表明:在频率10 kHz附近时,由于极化跟不上外电场变化,相对介电常数急速下降,同时产生相应的损耗峰。随着SiO2掺杂量的增加,损耗角正切(tanδ)先降低后升高,在掺杂量为0时最高,1.0%(摩尔分数)时最低,SiO2的掺杂明显降低了在105 Hz附近的tanδ值。非线性系数(α)随着SiO2掺杂量的增加先增加后减小,在SiO2掺杂量为1.0%时,样品α值达到43.36,晶界势垒高度φb在10 kHz时为1.98 eV,施主浓度低至2.97×1024 m-3,同时漏电流IL为0.31 μA/cm2。
Abstract
ZnO-Bi2O3-MnO2-Cr2O3 varistor ceramics doped with different amounts of silicon dioxide (SiO2) were prepared by a conventional solid-phase sintering method. The phase composition and microstructure of the samples were investigated by X-ray diffraction and scanning electron microscopy. The electrical properties were measured by sourcemetry and inductance capacitance resistance, and the double Schottky barrier parameters were measured by a capacitance-voltage characteristic method. The results show that when the frequency is near 105 Hz, the relative dielectric constant (εr) decreases rapidly since the polarization cannot change with the frequency of electric field, resulting in the corresponding loss peak. The loss peak (tanδ) firstly decreases and then increases with the increase of the doping amount, and its maximum tanδ is obtained witrhout SiO2 and the minimum tanδ is achieved at 1.0% SiO2. The value of tanδ at a frequency of 105 Hz is reduced by doping SiO2. The nonlinear coefficient firstly increases and then decreases with the increase of SiO2 doping amount. The value of α reaches 43.36, the value of φb is 1.98 eV at 10 kHz, the donor concentration is 2.97×1024 m-3, and the leakage current IL is 0.31 μA/cm2 at SiO2 doping amount of 1.0%.
刘建科, 陈姣姣, 曹文斌, 苏锦锋, 李智智, 徐荣凯, 刘士花. SiO2掺杂对ZnO-Bi2O3基压敏陶瓷电学性能的影响[J]. 硅酸盐学报, 2022, 50(9): 2366. LIU Jianke, CHEN Jiaojiao, CAO Wenbin, SU Jinfeng, LI Zhizhi, XU Rongkai, LIU Shihua. Effect of SiO2 Doping on Electrical Properties of ZnO-Bi2O3 Based Varistor Ceramics[J]. Journal of the Chinese Ceramic Society, 2022, 50(9): 2366.