陕西科技大学文理学院，半导体材料与器件研究中心，西安 710021
研究了Er2O3掺杂对ZnO-Bi2O3-Sb2O3-Co2O3-MnO2-Cr2O3-SiO2压敏陶瓷微观结构和电学性能的影响。Er2O3掺杂后，部分Er固溶于富Bi相中，对ZnO压敏陶瓷的晶界特性和电学性能产生了较大影响。随着Er2O3掺杂量从0.09% (质量分数)增大到0.35%，样品晶界电阻率不断减小，漏电流密度不断增大，双Schottky晶界势垒高度和非线性系数先增大后减小，击穿场强不断增大；当Er2O3掺杂量为0.27%时，所得ZnO压敏陶瓷非线性系数达到54.4±1.5，击穿场强为(470.1±2.8) V·mm-1，漏电流密度为(1.9±0.1) μA·cm-2，损耗角正切tanδ始终小于0.03，样品综合电学性能最优，性能参数标准偏差均较小，说明样品具有较好的制备可重复性，为Er2O3掺杂高性能ZnO压敏陶瓷的制备提供了借鉴。
1 内蒙古科技大学材料与冶金学院, 包头 014010
2 广州航海学院, 广州 510725
以分析纯试剂为原料模拟含锌冶炼渣, 采用熔融法制备微晶玻璃, 利用X射线衍射、扫描电子显微镜、拉曼光谱等表征方法, 探究不同氧化锌掺杂量对微晶玻璃形成、晶化及理化性能的影响。结果表明, 微晶玻璃的主要结晶相为堇青石相, 少量氧化锌(低于0.5%, 摩尔分数, 下同)的加入能够增强玻璃形成能力。随着氧化锌含量逐渐增加(0.5%~20.0%), 玻璃网络结构的完整性变差, 玻璃的黏度降低, 微晶玻璃的主要结晶相由堇青石转变为尖晶石, 同时结晶度和晶粒尺寸增大, 从而微晶玻璃的体积密度、硬度和耐酸碱性提高。微晶玻璃对重金属锌有较好的固化效果, 因此锌浸出浓度远低于标准值, 浸出率趋于稳定。本研究可为实现微晶玻璃固化重金属提供参考和借鉴。
微晶玻璃 氧化锌 重金属锌 显微结构 固化机制 尖晶石 glass-ceramics zinc oxide heavy metal zinc microstructure solidification mechanism spinel
1 开封大学材料与化学工程学院，开封 475000
2 华北水利水电大学材料学院，郑州 450001
3 郑州大学材料科学与工程学院，郑州 450001
4 南京工程学院材料科学与工程学院，南京 210000
5 佛光发电设备股份有限公司，郑州 450001
对苯二酚(HQ)作为一种稳定剂和抗氧剂主要应用于工业领域，工业废水中对苯二酚的残留对人体及环境危害严重，因此，建立一种简单、准确检测对苯二酚的方法对食品安全和环境监测具有重要意义。本文构建了纳米氧化锌-高纯石墨/玻碳(ZnO-C/GC)复合材料电化学传感器，实验材料简单易得，成本低。利用原子力显微镜(AFM)、场发射扫描电子显微镜(SEM)、X射线衍射(XRD)和电化学交流阻抗法(EIS)分析了纳米ZnO-C复合材料的结构特征、表面特征和导电性，采用循环伏安法(CV)实现了纳米ZnO-C/GC复合材料电化学传感器对对苯二酚的检测，探究了对苯二酚的电催化机理，该电化学传感器检测对苯二酚具有良好的稳定性和准确性，较宽的线性范围，检出限达到1.0×10-8 mol/L。
纳米复合材料 电化学传感器 氧化锌 对苯二酚 电催化 nanocomposite material electrochemical sensor zinc oxide hydroquinone electrocatalysis
Author Affiliations
Abstract
1 School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
2 Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, China
3 Institute of Microelectronics, Peking University, Beijing 100871, China
As growing applications demand higher driving currents of oxide semiconductor thin-film transistors (TFTs), severe instabilities and even hard breakdown under high-current stress (HCS) become critical challenges. In this work, the triggering voltage of HCS-induced self-heating (SH) degradation is defined in the output characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) TFTs, and used to quantitatively evaluate the thermal generation process of channel donor defects. The fluorinated a-IGZO (a-IGZO:F) was adopted to effectively retard the triggering of the self-heating (SH) effect, and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F. The proposed scheme noticeably enhances the high-current applications of oxide TFTs.
amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) current stress self-heating (SH) fluorination Journal of Semiconductors
2023, 44(9): 092601
Author Affiliations
Abstract
1 College of Electronic and Information Engineering, Shenzhen University, Shenzhen 518060, China
2 Institute of Microscale Optoelectronics (IMO), Shenzhen University, Shenzhen 518060, China
3 State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving high mobility and offers significant opportunities for commercialization. This paper provides a review of progress made in improving the mobility of ITZO TFTs. This paper begins by describing the development and current status of metal-oxide TFTs, and then goes on to explain the advantages of selecting ITZO as the TFT channel layer. The evaluation criteria for TFTs are subsequently introduced, and the reasons and significance of enhancing mobility are clarified. This paper then explores the development of high-mobility ITZO TFTs from five perspectives: active layer optimization, gate dielectric optimization, electrode optimization, interface optimization, and device structure optimization. Finally, a summary and outlook of the research field are presented.
thin-film transistor (TFT) indium-tin-zinc oxide (ITZO) TFT mobility active matrix (AM) displays Journal of Semiconductors
2023, 44(9): 091602
上海大学通信与信息工程学院，特种光纤与光接入网重点实验室，上海 200444
为实现大气污染物中氨气（NH3）的快速、准确测量，本文提出了一种基于氧化锌（ZnO）涂层单模-无芯-单模（SNS）光纤结构的高灵敏度NH3传感器。该传感器利用的是ZnO膜层吸附NH3后自身折射率改变，进而导致无芯光纤干涉谱谐振波长发生变化的特性。通过建立NH3体积分数与谐振波长偏移量的关系，最终实现了NH3体积分数的测量。本文基于模式传输理论对ZnO涂层SNS传感器的光谱特性进行了仿真，仿真结果显示：当ZnO膜层的折射率从1.929变化至1.889时，60 nm和130 nm ZnO膜厚下SNS传感器的灵敏度分别为11.8 nm/RIU和28.6 nm/RIU。制备了ZnO膜厚分别为60 nm和130 nm的SNS传感器，其在NH3体积分数为0~42.0×10-6环境下的灵敏度相差不大，这主要是由ZnO对NH3的吸附饱和引起的。进一步分析获得60 nm ZnO膜厚下SNS传感器的平均灵敏度为16.87×106 pm，检测限为6.6×10-6，响应时间和恢复时间分别为70 s和90 s。随着温度由16.5 ℃升至56 ℃，该传感器对NH3的检测灵敏度从17.96×106 pm降低至7.57×106 pm，温度和时间对检测限的影响分别为0.0237×10-6 ℃-1和0.026×10-6 d-1，该传感器具有较好的稳定性。
传感器 无芯光纤 氧化锌 氨气测量 温度 中国激光
2023, 50(10): 1006006
1 辽宁石油化工大学石油化工学院, 辽宁 抚顺 113001
2 中煤科工集团沈阳研究院有限公司 沈阳 113122
在催化领域, 氧化锌纳米棒因其在径向上具有纳米粒子的小尺寸效应、纵向上具有体相材料的宏观特性, 而受到越来越多的关注。采用改进的溶剂热法合成ZnO纳米棒, 采用分步法加入Zn2+与NaOH。通过X射线衍射, 扫描电子显微镜等方法对样品进行表征, 探究了聚乙二醇(PEG)辅助ZnO纳米棒合成的作用机理以及NaOH的加入方式对ZnO纳米棒形貌控制规律的影响, 研究了不同长/径的ZnO纳米棒的脱硫性能。结果表明: PEG的分子量对ZnO纳米棒的形貌有着显著影响, PEG分子量为20 000时, 能够在温和的溶剂热条件下, 控制合成出长度为3~4 ?倕 m, 直径为250 nm左右的ZnO纳米棒, 分步法加入NaOH优于一步法加入NaOH。将合成的ZnO纳米棒负载金属氧化镍制成脱硫剂, 大长/径的棒状ZnO脱硫剂的脱硫率高达98.2%, 同时具有良好的再生性能。
氧化锌 纳米棒 聚乙二醇 溶剂热 脱硫 zinc oxide nanorods polyethylene glycol solvothermal desulfurization
陕西科技大学文理学院, 陕西科技大学半导体材料与器件研究中心, 西安 710021
采用固相烧结法制备 ZnO-Pr6O11-Co2O3-Cr2O3-Er2O3-SiO2压敏陶瓷, 研究了 SiO2掺杂对 ZnO压敏陶瓷的物相、微观形貌、压敏特性和阻抗特性等的影响。结果表明: SiO2具有抑制晶粒生长的作用, 随着 SiO2掺杂量增加, 晶粒尺寸逐渐减小；SiO2掺杂量为 1.0%(摩尔分数)时, ZnO压敏陶瓷的性能昀好, 生成的第二相物质昀多, 击穿场强、平均晶界电压、非线性系数、晶界电阻率和晶界势垒高度均为昀大, 其值分别为 435.5 V/mm, 1.63 V, 17.5, 17 400 M..cm和 0.37 eV, 漏电流昀小为 1 μA；与未掺杂 SiO2的 ZnO压敏陶瓷相比, 击穿场强和非线性系数分别提高了 3.6倍和 6.6倍。
氧化锌压敏陶瓷 二氧化硅掺杂 微观结构 压敏性能 阻抗性能 zinc oxide varistor silicon oxide doping microstructure varistor property impedance characteristic
陕西科技大学半导体材料与器件中心，西安 710021
在ZnO-Bi2O3-MnO2-Cr2O3基础上掺杂不同含量的SiO2，采用传统固相烧结法制备ZnO压敏陶瓷。采用X射线衍射仪、扫描电子显微镜研究了ZnO压敏陶瓷的物相组成和微观结构。利用数字源表、电感电容电阻测试仪测试并分析其电学性能。利用电容-电压特性法测试其晶界参数。结果表明：在频率10 kHz附近时，由于极化跟不上外电场变化，相对介电常数急速下降，同时产生相应的损耗峰。随着SiO2掺杂量的增加，损耗角正切(tanδ)先降低后升高，在掺杂量为0时最高，1.0%(摩尔分数)时最低，SiO2的掺杂明显降低了在105 Hz附近的tanδ值。非线性系数(α)随着SiO2掺杂量的增加先增加后减小，在SiO2掺杂量为1.0%时，样品α值达到43.36，晶界势垒高度φb在10 kHz时为1.98 eV，施主浓度低至2.97×1024 m-3，同时漏电流IL为0.31 μA/cm2。
二氧化硅 氧化锌 压敏陶瓷 晶界势垒 非线性系数 电容-电压特性法 silicon dioxide zinc oxide varistor ceramics Schottky barrier nonlinear coefficient capacitance-voltage characteristic method
Author Affiliations
Abstract
Laboratory of Nanomaterials, Southern Federal University, 200/1 Stachki Avenue, 344090 Rostov-on-Don, Russia
A method for obtaining a new type of surface acoustic wave (SAW) transducer operating at double frequency with a single-phase closed-loop lattice and a piezoelectric zinc oxide film is developed and experimentally investigated. A method for calculating such a transducer has been developed, its equivalent circuit has been compiled, taking into account propagation losses, losses in the metal film and the inductance of the connecting wires. When the frequency is doubled, the SAW attenuation per unit length increases.A method for obtaining a new type of surface acoustic wave (SAW) transducer operating at double frequency with a single-phase closed-loop lattice and a piezoelectric zinc oxide film is developed and experimentally investigated. A method for calculating such a transducer has been developed, its equivalent circuit has been compiled, taking into account propagation losses, losses in the metal film and the inductance of the connecting wires. When the frequency is doubled, the SAW attenuation per unit length increases.
Surface acoustic wave (SAW) interdigital transducer (IDT) zinc oxide (ZnO) film Journal of Advanced Dielectrics
2022, 12(5): 2250016
