SiO2掺杂对ZnO-Bi2O3基压敏陶瓷电学性能的影响

刘建科; 陈姣姣; 曹文斌; 苏锦锋; 李智智; 徐荣凯; 刘士花

doi:doi:10.14062/j.issn.0454-5648.20220158

硅酸盐学报, 2022, 50 (9): 2366, 网络出版: 2022-12-26

SiO₂掺杂对ZnO-Bi₂O₃基压敏陶瓷电学性能的影响

Effect of SiO₂ Doping on Electrical Properties of ZnO-Bi₂O₃ Based Varistor Ceramics

论文大纲

刘建科 ^*陈姣姣曹文斌苏锦锋李智智徐荣凯刘士花

作者单位

陕西科技大学半导体材料与器件中心，西安 710021

摘要

在ZnO-Bi2O3-MnO2-Cr2O3基础上掺杂不同含量的SiO2，采用传统固相烧结法制备ZnO压敏陶瓷。采用X射线衍射仪、扫描电子显微镜研究了ZnO压敏陶瓷的物相组成和微观结构。利用数字源表、电感电容电阻测试仪测试并分析其电学性能。利用电容-电压特性法测试其晶界参数。结果表明：在频率10 kHz附近时，由于极化跟不上外电场变化，相对介电常数急速下降，同时产生相应的损耗峰。随着SiO2掺杂量的增加，损耗角正切(tanδ)先降低后升高，在掺杂量为0时最高，1.0%(摩尔分数)时最低，SiO2的掺杂明显降低了在105 Hz附近的tanδ值。非线性系数(α)随着SiO2掺杂量的增加先增加后减小，在SiO2掺杂量为1.0%时，样品α值达到43.36，晶界势垒高度φb在10 kHz时为1.98 eV，施主浓度低至2.97×1024 m-3，同时漏电流IL为0.31 μA/cm2。

Abstract

ZnO-Bi2O3-MnO2-Cr2O3 varistor ceramics doped with different amounts of silicon dioxide (SiO2) were prepared by a conventional solid-phase sintering method. The phase composition and microstructure of the samples were investigated by X-ray diffraction and scanning electron microscopy. The electrical properties were measured by sourcemetry and inductance capacitance resistance, and the double Schottky barrier parameters were measured by a capacitance-voltage characteristic method. The results show that when the frequency is near 105 Hz, the relative dielectric constant (εr) decreases rapidly since the polarization cannot change with the frequency of electric field, resulting in the corresponding loss peak. The loss peak (tanδ) firstly decreases and then increases with the increase of the doping amount, and its maximum tanδ is obtained witrhout SiO2 and the minimum tanδ is achieved at 1.0% SiO2. The value of tanδ at a frequency of 105 Hz is reduced by doping SiO2. The nonlinear coefficient firstly increases and then decreases with the increase of SiO2 doping amount. The value of α reaches 43.36, the value of φb is 1.98 eV at 10 kHz, the donor concentration is 2.97×1024 m-3, and the leakage current IL is 0.31 μA/cm2 at SiO2 doping amount of 1.0%.

参考文献

[1] 王振林, 李盛涛. ZnO压敏陶瓷制造与应用［M］. 北京: 科学出版社, 2009, 3-12.

[2] 刘建科, 陈永佳, 崔永宏. 添加剂离子半径对ZnO压敏陶瓷非线性系数的影响［J］. 硅酸盐学报, 2016, 44(12): 1736-1739.

[3] CAO W B, XIE X, WANG Y Q, et al. Effect of Pr6O11 doping on the microstructure and electrical properties of ZnO varistors［J］. Ceram Int, 2019, 45(18): 24777-24783.

[4] HEMBRAM K, RAO T N, SRINIVASA R S, et al. CaO doped ZnO-Bi2O3 varistors: Grain growth mechanism, structure and electrical properties［J］. Ceram Int, 2021, 47(1): 1229-1237.

[5] ZHANG L, LIU W F, GAO J H, et al. Effects of the Er2O3 doping on the microstructure and electrical properties of ZnO-Bi2O3 based varistor ceramics［J］. Ceram Int, 2021, 47(22): 32394-32356.

[6] WANG M Y, REN X, ZHOU Q B, et al. High improvement of degradation behavior of ZnO varistors under high current surges by appropriate Sb2O3 doping［J］. J Eur Ceram Soc, 2021, 41(1): 436-442.

[7] LIN W W, XU Z J, WANG Z H, et al. Influence of Bi3Zn2Sb3O14 pre-synthesis phase on electrical properties of the ZnO-Bi2O3 based varistor ceramics［J］. J Alloys Compd, 2020, 834(5): 155072.

[8] 王昊, 赵洪峰, 康加爽, 等. B2O3和Al2O3共同掺杂ZnO压敏陶瓷的性能［J］. 材料研究学报, 2021, 35(2): 110-114.

[9] 尹玉, 陈鑫, 刘凌云, 等. ZnO压敏陶瓷常规烧结工艺的优化［J］. 湖北工业大学学报, 2020, 35(5): 27-30, 74.

[10] ZHAO X, LIAANG J J, SUN J J, et al. J Eur Ceram Soc, 2021, 41(1): 430-435.

[11] 曹文斌, 苏锦锋, 刘建科, 等. 升温速率对ZnO压敏陶瓷微观结构和电学性能的影响［J］. 硅酸盐学报, 2021, 49(12): 2615-2620.

[12] SAMARPITA R, DEBDULAL D, TAPATEE K R. Two stage sintering behaviour of Er2O3 doped high performance ZnO varistors［J］. J Eur Ceram Soc, 2021, 41(10): 5184-5192.

[13] 万帅, 许衡, 曹伟, 等. La2O3的掺杂对ZnO压敏陶瓷电性能的影响［J］. 压电与声光, 2020, 42(3): 353-356, 360.

[14] ZHANG L, GAO J H, LIU W F, et al. Simultaneously enhanced electrical stability and nonlinearity in ZnO varistor ceramics: Role of Si-stabilized δ-Bi2O3 phase［J］. J Eur Ceram Soc, 2021 41: 2641-2647.

[15] 黄国贤, 姜胜林, 郭立. Zn2SiO4掺杂对氧化锌压敏电阻性能的影响［J］. 电子元件与材料, 2011, 30(9): 24-26, 35.

[16] 程宽, 王雪芹, 刘冬季, 等. B2O3掺杂氧化锌压敏电阻烧结工艺的微观结构和电气特性［J］. 功能材料, 2020, 51(8): 8189-8193.

[17] ASOKAN T, FREER R. Grain and grain boundary conduction in zinc oxide varistors before and after DC degradation［J］. J Eur Ceram Soc, 1993, 11(6): 545- 550.

[18] OISSON E, DUNLOP G L, OSTERLUND R. Interfacial microstructure of a ZnO varistor material［J］. Ultramicroscopy, 1988, 26(4): 421.

刘建科, 陈姣姣, 曹文斌, 苏锦锋, 李智智, 徐荣凯, 刘士花. SiO₂掺杂对ZnO-Bi₂O₃基压敏陶瓷电学性能的影响[J]. 硅酸盐学报, 2022, 50(9): 2366. LIU Jianke, CHEN Jiaojiao, CAO Wenbin, SU Jinfeng, LI Zhizhi, XU Rongkai, LIU Shihua. Effect of SiO₂ Doping on Electrical Properties of ZnO-Bi₂O₃ Based Varistor Ceramics[J]. Journal of the Chinese Ceramic Society, 2022, 50(9): 2366.

SiO₂掺杂对ZnO-Bi₂O₃基压敏陶瓷电学性能的影响

关于本站 Cookie 的使用提示

全站搜索