设计了一种标准CMOS工艺下抗总剂量辐射(TID)的带隙基准电压源。分析了传统结构在辐射环境下的固有缺陷。利用二极管正向导通电压受电流影响较小的特性,提高了带隙基准电压源的抗总剂量辐射能力。该基准电压源包含启动电路、基准核和自偏置电路。将基准电压源用于12位100 kS/s采样率A/D转换器的一个单元,进行了流片和测试。结果表明,经总剂量辐射试验后,该基准电压源的输出电压变化较小。在-55 ℃~125 ℃范围内,辐射前的温度系数为1.53×10-5/℃,辐射后的温度系数为1.71×10-5/℃。

An anti-TID radiation bandgap voltage reference was designed in a standard CMOS IC process. The intrinsic weakness of traditional bandgap framework in radiation situation was analyzed. The resistance of the bandgap voltage reference to total dose radiation was improved by taking of advantages of the characteristics that the diode positive guide voltage was less affected by current. The bandgap voltage reference consisted of a startup circuit, a BGR core circuit and a self-bias circuit. The bandgap voltage reference was integrated in a 12 bit 100 kS/s sampling rate A/D converter as a unit, and the ADC was fabricated and tested. The results showed that the output voltage of the reference changed little after the total dose radiation test. Under the -55 ℃~125 ℃ temperature range, the temperature drift coefficient was 1.53×10-5/℃ before total dose radiation, and it was 1.71×10-5/℃ after total dose radiation.