利用磁控溅射和热退火在硅衬底上制备了Ag纳米颗粒镶嵌的氧化硅薄膜(SiO2∶Ag)， 制作了电致发光结构ITO/SiO2∶Ag/p-Si， 观测到了可见区的电致发光。 发现薄膜中的Ag纳米颗粒不仅成倍地提高器件的发光强度， 还明显地移动电致发光的峰位。 Ag含量越高， 颗粒越大， 发光峰位越红移。 氧化硅中的发光中心与纳米Ag 间的电磁相互作用， 可用来定性解释这一实验结果。 这种效应可把低效发光的材料转换为相对高效的发光材料。

Ag nanocrystal-embedded silicon oxide (SiO2∶Ag) films with varying Ag fractions were prepared on p-Si substrate by magnetron co-sputtering and thermal annealing. Visible electroluminescence (EL) was observed from the structures of ITO/SiO2∶Ag/p-Si. The authors found that Ag nanocrystals in the SiO2 film can not only shift the EL peak evidently but also enhance the EL intensity markedly. The larger the Ag fractions in the EL structures, the longer the peak wavelengths. The electromagnetic interactions of the Ag nanocrystals with the emitters in the film via local surface plasmons are considered responsible for these experimental results.