一种低触发电压的两级防护SCR器件

提出了一种用于降低触发电压的两级防护SCR(TSPSCR)。在传统LVTSCR中植入P-ESD层, 增设额外的二极管。因为P-ESD层的掺杂浓度较高, 该器件能更早发生雪崩击穿而触发第一级泄流路径, 从而开启第二级泄流路径。Sentaurus TCAD仿真结果表明, 该器件的触发电压从传统器件的10.59 V降低至4.12 V, 维持电压为1.25 V, 1 V直流电压下漏电流仅为7.85 nA。优化后的TSPSCR适用于先进1 V工作电压的电路中。

Abstract

A two-stage protection SCR (TSPSCR) was proposed to reduce the trigger voltage. The P-ESD layer was implanted in the traditional LVTSCR, and an additional diode was added. Because of the higher doping concentration of P-ESD layer, the device could trigger the first-stage discharge path by avalanche breakdown earlier, thus opening the second-stage discharge path. The Sentaurus TCAD simulation results showed that compared with conventional SCRs, the device had a lower trigger voltage from 10.59 V to 4.12 V, a maintenance voltage of 1.25 V, and a leakage current of 7.85 nA at 1 V DC voltage. The optimized TSPSCR could be used in advanced circuits with 1 V operating voltage.

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张英韬, 朱治华, 范晓梅, 毛盼, 宋彬, 许杞安, 吴铁将, 陈睿科, 王耀, 刘俊杰. 一种低触发电压的两级防护SCR器件[J]. 微电子学, 2022, 52(1): 104. ZHANG Yingtao, ZHU Zhihua, FAN Xiaomei, MAO Pan, SONG Bin, XU Qi’an, WU Tiejiang, CHEN Ruike, WANG Yao, LIOU Juin Jei. A Two-Stage-Protection SCR Device with Low Trigger Voltage[J]. Microelectronics, 2022, 52(1): 104.

一种低触发电压的两级防护SCR器件

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