针对具备100~200nm薄吸收区的肖特基型探测器，研究了不同金属接触对其暗电流和光谱响应特性的影响。以GaN基材料为主体，在薄层Al0.42Ga0.58N表面分别制备Au和Ni/Au形成肖特基接触，在Al0.55Ga0.45N表面以Ti/Al/Ti/Au制备欧姆接触，从而制备薄吸收区的AlGaN肖特基日盲探测器。结果表明对AlGaN材料，Au肖特基型探测器的光响应良好，达到0.10A/W，外量子效率峰值为47%，但暗电流稍大，为3.91×10-10A/cm2。而Ni/Au肖特基型探测器的暗电流稳定，普遍在4.17×10-11A/cm2，而响应率一般，为0.07A/W，外量子效率为33%。测试结果与仿真模型基本一致，对正照式，受势垒高度和界面损耗层等因素影响，相较Ni/Au肖特基型探测器，Au肖特基型探测器的响应范围更大、响应率更高；对背照式，吸收层的厚度对响应范围有很大影响，薄吸收区有效展宽了响应区域。

For a Schottky detector with a thin absorption region of 100~200nm, the influence of different metal contacts on the dark current and spectral response characteristics was studied. Taking GaNbased materials as the main body, Au and Ni/Au were prepared on the surface of thin Al0.42Ga0.58N to form Schottky contacts, and Ti/Al/Ti/Au were prepared on the surface of Al0.55Ga0.45N to form ohmic contacts. Thus, an AlGaN Schottky solarblind detector with a thin absorption region is fabricated. The results show that for AlGaN material, the photoresponse of Au Schottky detector is good, reaching 0.10A/W, the peak external quantum efficiency is 47%, but the dark current is slightly larger, which is 3.91×10-10A/cm2. The dark current of Ni/Au Schottky detector is stable at 4.17×10-11A/cm2, while the responsivity is generally 0.07A/W, and the external quantum efficiency is 33%. The test results are consistent with the simulation model. For the front irradiation mode, Au Schottky detector has a larger response range and higher responsivity than Ni/Au Schottky detector due to factors such as barrier height and interface loss layer. For the back irradiation mode, the thickness of the absorption layer has a great effect on the response range, and the thin absorption region effectively extends the response range.