薄吸收区AlGaN肖特基日盲探测器在不同金属接触下的表现及机理分析

针对具备100~200nm薄吸收区的肖特基型探测器，研究了不同金属接触对其暗电流和光谱响应特性的影响。以GaN基材料为主体，在薄层Al0.42Ga0.58N表面分别制备Au和Ni/Au形成肖特基接触，在Al0.55Ga0.45N表面以Ti/Al/Ti/Au制备欧姆接触，从而制备薄吸收区的AlGaN肖特基日盲探测器。结果表明对AlGaN材料，Au肖特基型探测器的光响应良好，达到0.10A/W，外量子效率峰值为47%，但暗电流稍大，为3.91×10-10A/cm2。而Ni/Au肖特基型探测器的暗电流稳定，普遍在4.17×10-11A/cm2，而响应率一般，为0.07A/W，外量子效率为33%。测试结果与仿真模型基本一致，对正照式，受势垒高度和界面损耗层等因素影响，相较Ni/Au肖特基型探测器，Au肖特基型探测器的响应范围更大、响应率更高；对背照式，吸收层的厚度对响应范围有很大影响，薄吸收区有效展宽了响应区域。

Abstract

For a Schottky detector with a thin absorption region of 100~200nm, the influence of different metal contacts on the dark current and spectral response characteristics was studied. Taking GaNbased materials as the main body, Au and Ni/Au were prepared on the surface of thin Al0.42Ga0.58N to form Schottky contacts, and Ti/Al/Ti/Au were prepared on the surface of Al0.55Ga0.45N to form ohmic contacts. Thus, an AlGaN Schottky solarblind detector with a thin absorption region is fabricated. The results show that for AlGaN material, the photoresponse of Au Schottky detector is good, reaching 0.10A/W, the peak external quantum efficiency is 47%, but the dark current is slightly larger, which is 3.91×10-10A/cm2. The dark current of Ni/Au Schottky detector is stable at 4.17×10-11A/cm2, while the responsivity is generally 0.07A/W, and the external quantum efficiency is 33%. The test results are consistent with the simulation model. For the front irradiation mode, Au Schottky detector has a larger response range and higher responsivity than Ni/Au Schottky detector due to factors such as barrier height and interface loss layer. For the back irradiation mode, the thickness of the absorption layer has a great effect on the response range, and the thin absorption region effectively extends the response range.

参考文献

[1] Averine S, Chan Y C, Lam Y L. Evaluation of Schottky contact parameters in metalsemiconductormetal photodiode structures[J]. Appl. Phys. Lett., 2000, 77(2): 274276.

[2] 黄烈云, 吴琼瑶, 赵文伯, 等. 日盲型AlGaN PIN紫外探测器的研制[J]. 半导体光电, 2007, 28(3): 342344.

[3] 徐立国, 谢雪松, 吕长志, 等. GaN基紫外光探测器研究进展[J]. 半导体光电, 2004, 25(6): 411416.

[4] Chang S J, Jhou Y D, Lin Y C, et al. GaNbased MSM photodetectors prepared on patterned sapphire substrates[J]. IEEE Photon. Technol. Lett., 2008, 20(22): 18661868.

[5] 李静杰, 程新红, 王谦, 等. 退火温度对Au/Ti/4HSiC肖特基接触特性的影响[J]. 半导体技术, 2017, 42(8): 598602, 630.

[6] Wang K, Wang R X, Fung S, et al. Film thickness degradation of Au/GaN Schottky contact characteristics[J]. Materials Science and Engineering: B, 2005, 117(1): 2125.

[7] 储开慧. 氮化镓基肖特基光电器件的研究[D]. 上海: 中国科学院大学(中国科学院上海技术物理研究所), 2010.

[8] 李浩杰, 张燕. 蓝宝石衬底多层AlGaN薄膜透射谱研究[J]. 光学学报, 2020, 40(19): 219228.

[9] Cheung S K, Cheung N W. Extraction of Schottky diode parameters from forward currentvoltage characteristics[J]. Appl. Phys. Lett., 1986, 49(2): 8587.

[10] 刘芳, 张海峰, 陈燕宁, 等. 320nm AlGaN肖特基型紫外探测器的研制[J]. 电力电子技术, 2020, 54(2): 117119.

[11] 徐峰, 于国浩, 邓旭光, 等. Pt/Au/nInGaN肖特基接触的电流输运机理[J]. 物理学报, 2018, 67(21): 390395.

[12] Kim H, Choi S, Choi B J. Forward current transport properties of AlGaN/GaN Schottky diodes prepared by atomic layer deposition[J]. Coatings, 2020, 10(2): 194.

[13] Monroy E, Calle F, Pau J L, et al. Analysis and modeling of AlxGa1-xNbased Schottky barrier photodiodes[J]. J. of Appl. Phys., 2000, 88(4): 20812091.

[14] Helman J S, SnchezSinencio F. Theory of internal photoemission[J]. Phys. Rev. B, 1973, 7(8): 37023706.

[15] Zheng H, Yong K, YingWen T, et al. Study on the spectral response of the Schottky photodetector of GaN[J]. Chinese Physics, 2006, 15(6): 13251329.

胡乐枫, 张燕. 薄吸收区AlGaN肖特基日盲探测器在不同金属接触下的表现及机理分析[J]. 半导体光电, 2022, 43(3): 510. HU Lefeng, ZHANG Yan. Performance and Mechanism Analysis of Thin Absorption Region AlGaN Schottky Solarblind Detector with Different Metal Contact[J]. Semiconductor Optoelectronics, 2022, 43(3): 510.

薄吸收区AlGaN肖特基日盲探测器在不同金属接触下的表现及机理分析

关于本站 Cookie 的使用提示

全站搜索

薄吸收区AlGaN肖特基日盲探测器在不同金属接触下的表现及机理分析

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索