InAs/ GaSb II类超晶格红外探测器背减薄技术研究
[1] Sakaki H, Chang L L, Sai-Halasz G A, et al. Two-dimensional Electronic Structure in InAs-GaSb Superlattices \[J\]. Solid State Communications, 1978, 26(9): 589-592.
[2] Smith D L, Mailhiot C. Proposal for Strained Type II Superlattice Infrared Detectors \[J\]. Journal of Applied Physics, 1987, 62(6): 2545-2548.
[3] Talwar D N,Jogai B, Loehr J P. Novel Type II Strained Layer Superlattices for Long Wavelength Infrared Detectors \[J\]. Materials Science and Engineering: B, 1998, 51(1-3): 12-17.
[4] 徐志成. InAs/GaSb II类超晶格探测器结构MBE生长研究 \[D\]. 北京: 中国科学院上海技术物理研究所, 2014.
[5] Hoang A M, Dehzangi A, Adhikary S, et al. High Performance Bias-selectable Three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors Based on Type-II InAs/GaSb/AlSb Superlattices \[J\]. Scientific Reports, 2016, 6: 1-7.
[6] Bai Y B, Bai Y B, Zhao Y W, et al. N-type GaSb Single Crystals with High Below-band Gap Transmission \[J\]. Chinese Physics B, 2017, 26(10): 107801.
[7] 李海燕红外, 2023, 44(2): 8-12, 曹凌霞, 陈籽先, 等. 大面阵锑化铟探测器芯片背减薄工艺技术开发 \[J\]. 红外, 2023, 44(2): 8-12.
[8] 边子夫, 李晖, 徐世海, 等. GaSb单晶片CMP工艺的研究 \[J\]. 微纳电子技术, 2017, 54(11): 797-800.
王晓乾, 胡雨农, 游聪娅, 李景峰, 李海燕, 刘铭. InAs/ GaSb II类超晶格红外探测器背减薄技术研究[J]. 红外, 2023, 44(10): 0015. WANG Xiao-qian, HU Yu-nong, YOU Cong-ya, LI Jing-feng, LI Hai-yan, LIU Ming. on Back Thinning Technology of InAs/GaSbType-II Superlattice Infrared Detector[J]. INFRARED, 2023, 44(10): 0015.