传统低压触发可控硅(LVTSCR)维持电压过低, 应用于片上ESD防护时存在闩锁风险。文章提出了一种嵌入分流路径的LVTSCR。基于0.18 μm CMOS工艺, 使用Sentaurus-TCAD软件模拟人体模型, 对器件准静态特性进行了分析。结果表明, 新型器件在保持触发电压、ESD防护性良好的情况下, 有效提高了维持电压。对关键尺寸D6进行优化, 该器件的维持电压提高到5.5 V以上, 器件可安全应用于5 V电压电路, 避免了闩锁效应。

Traditional low-voltage triggered silicon controlled rectifier(LVTSCR)has low holding voltage, which may lead to latch-up risk when applied to ESD protection on chip. In this paper, an embedded shunt path LVTSCR was proposed. Based on a 0.18 μm CMOS technology, Sentaurus-TCAD software was used to simulate the human body model, and the quasi-static characteristics of the device were analyzed. The results showed that the novel device could effectively improve the holding voltage while maintaining the trigger voltage and ESD protection. By optimizing the key dimension D6, the device’s holding voltage was increased to more than 5.5 V, which could be safely applied to 5 V operating voltage circui,t and the latch-up effects were avoided.