基于金属催化等离子体刻蚀的MPCVD单晶金刚石生长缺陷调控

李一村; 文东岳; 郝晓斌; 代兵; 刘本建; 朱嘉琦; 韩杰才

硅酸盐学报, 2023, 51 (6): 1374, 网络出版: 2023-08-13

基于金属催化等离子体刻蚀的MPCVD单晶金刚石生长缺陷调控

Control of Defects in MPCVD Single Crystal Diamond Growth Based on Metal Catalyzed Plasma Etching

论文大纲

李一村 ^*文东岳郝晓斌代兵刘本建朱嘉琦韩杰才

作者单位

哈尔滨工业大学，特种环境复合材料技术国家级重点实验室，哈尔滨 150080

微波等离子体化学气相沉积单晶金刚石横向外延缺陷调控 microwave plasma chemical vapor deposition single crystal diamond lateral epitaxy defect control

摘要

单晶金刚石作为一种性能优异的半导体材料，在功率器件、深空探测等领域具有广阔的应用前景。然而采用微波等离子体化学气相沉积(MPCVD)法制备的单晶金刚石通常含有大量的缺陷，尤其是位错，严重限制了其电学性能的发挥。横向外延生长是半导体材料中常用的缺陷调控方法，近年也被应用于金刚石材料制备领域。本研究首先通过金属催化等离子体刻蚀在单晶金刚石籽晶上构造图形阵列，从而为同质外延单晶制备创造横向生长条件；随后通过MPCVD法在此基础上进行单晶金刚石制备，研究了横向外延生长过程并对样品进行了激光共聚焦显微镜、偏光显微镜、Raman光谱和缺陷密度测试。测试表明该方法能够稳定可控的制备图形化生长所需的阵列并降低生长层的缺陷密度。

Abstract

As one kind of semiconductor material with the superiorperformance, single crystal diamond (SCD) has broad application prospects in power devices, deep space exploration and other fields. However, SCD prepared viamicrowave plasma chemical vapor deposition (MPCVD) usually contains defects, especially dislocations, seriously restrictingits electrical performance. Lateral epitaxial growth as a common defect control method in semiconductor materialsis used in SCD preparation in recent years. In this work, firstly,a pattern array was constructed on SCD seed by metal catalyzed plasma etching to create a lateral growth condition for the preparation of homogeneous epitaxial. Secondly, SCD layer was prepared by MPCVD method, and the lateral epitaxial growth process was investigated. The samples were tested by laser confocal microscopy, polarizing microscopy, Raman spectroscopyand defect density measurement. The results show that this method can stably and controllably prepare the arrays needed for patterned growth and reduce the defect density of the growth layer.

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李一村, 文东岳, 郝晓斌, 代兵, 刘本建, 朱嘉琦, 韩杰才. 基于金属催化等离子体刻蚀的MPCVD单晶金刚石生长缺陷调控[J]. 硅酸盐学报, 2023, 51(6): 1374. LI Yicun, WEN Dongyue, HAO Xiaobin, DAI Bing, LIU Benjian, ZHU Jiaqi, HAN Jiecai. Control of Defects in MPCVD Single Crystal Diamond Growth Based on Metal Catalyzed Plasma Etching[J]. Journal of the Chinese Ceramic Society, 2023, 51(6): 1374.

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