光学学报, 2013, 33 (12): 1223002, 网络出版: 2013-12-05   

半导体激光诱导化学镀铜制备超材料太赫兹器件

Fabrication of Metamaterial Terahertz Devices by Semiconductor Laser Induced and Non-Electrolytic Plating with Copper
作者单位
中国计量学院太赫兹技术与应用研究所, 浙江 杭州 310018
摘要
提出了一种利用蓝光半导体激光器(405 nm)进行激光诱导化学镀铜制备超材料太赫兹器件的方法。此法加工的金属结构线宽可调,最小为5 μm,厚度可由镀铜时间来调节。使用太赫兹时域光谱系统对加工的太赫兹带阻滤波器进行了测试,测试结果与时域有限差分仿真计算基本相符,器件加工质量符合设计要求。使用半导体激光器进行激光诱导化学镀制备超材料太赫兹器件具有能耗低、设备成本低、性价比高等优点。
Abstract
A method for fabricating metamaterial terahertz devices with laser induced and non-electrolytic plating with copper using a semiconductor laser (405 nm) is proposed. The line width of metal structure fabricated by the method is adjustable, the minimum metal width is 5 μm, and its thickness can be adjusted by copper plating time. Moreover, a fabricated band-stop filter working in terahertz band is measured using terahertz time-domain spectrum. The result is in good agreement with finite-difference time-domain simulation. Fabricated quality of devices meet the design requirements. Fabrication of metamaterial terahertz devices by semiconductor laser induced and non-electrolytic plating possesses the advantages of low energy consumption, low equipment cost and high cost-effective as well.
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武东伟, 刘建军, 李化月, 韩昊, 洪治. 半导体激光诱导化学镀铜制备超材料太赫兹器件[J]. 光学学报, 2013, 33(12): 1223002. Wu Dongwei, Liu Jianjun, Li Huayue, Han Hao, Hong Zhi. Fabrication of Metamaterial Terahertz Devices by Semiconductor Laser Induced and Non-Electrolytic Plating with Copper[J]. Acta Optica Sinica, 2013, 33(12): 1223002.

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