集成太赫兹滤波器是实现集成太赫兹通信系统的基本器件之一，为了使太赫兹滤波器实现片上可调，提出了基于温控系统的太赫兹可调谐滤波器。相比于其他的太赫兹滤波器，提出的片上可调谐滤波器的调谐方法简单，尺寸小，可以很好地与其他太赫兹器件集成到晶片上。利用温控系统改变晶片的温度，再利用硅材料的热光效应改变折射率，使得微环耦合状态发生变化，从而让太赫兹滤波器的谐振峰发生漂移。在将加热片从30 ℃逐渐加温到90 ℃的过程中，太赫兹可调谐滤波器在180 GHz附近的谐振峰中心频率从180.453 GHz逐渐减小到180.224 GHz，变化范围为0.229 GHz，谐振深度从−68 dB逐渐变化为−44 dB，半高宽由原来的0.040 GHz逐渐变为0.246 GHz。

Integrated terahertz filter is one of the basic components of integrated terahertz communication system. In order to make the terahertz filter adjustable on chip, a terahertz tunable filter based on temperature control system is proposed. Compared with other terahertz filters, the proposed tunable on chip filter has the advantages of simple tuning method and small size, and can be well integrated with other terahertz devices on the chip. The temperature of the wafer is changed by the temperature control system, and the refractive index is changed by the thermo-optical effect of the silicon material, so that the coupling state of the microloop is changed, and the resonant peak of the THZ filter is shifted. In the process of heating the heating plate from 30 ℃ to 90 ℃, the center frequency of the resonant peak near 180 GHz of the terahertz tunable filter decreases gradually from 180.453 GHz to 180.224 GHz with a range of 0.229 GHz, the resonant depth changes gradually from -68 dB to -44 dB, and the half-height width changes gradually from the original 0.04 GHz to 0.246 GHz.