为了反映器件几何尺度上各个区域的性能分布, 采用波长为852 nm且可调聚焦面积的激光束作用在CdTe薄膜太阳电池的P-N结微区表面, 产生定域诱导光致电流响应, 并通过设置样品台的步进方式, 得到了所测器件在几何面积范围内的微区光谱响应分布图, 获得更直观的器件电流分布均匀性和P-N结特性。结果表明, 这种测试方式能够简化且低成本地建立与CdS/CdTe异质结制作技术密切相关的沉积与后处理工艺参数和材料特性的联系, 进而获得异质结界面分布均匀性与太阳电池电流-电压(I-V)特性参数均匀性的对应关系。该研究可为提高太阳电池的性能提供实验测试依据。

In order to reflect the distribution of the performance of each region on the geometric scale of the device, a laser beam with a wavelength of 852 nm and an adjustable focusing area was used to act on the surface of the P-N junction microregion of the CdTe thin-film solar cell to generate a localized induced photocurrent. By setting the step-by-step method of the sample stage, the micro-region spectral response distribution map of the measured device within the geometric area range was obtained, and a more intuitive device current distribution uniformity and P-N junction characteristics were obtained. The results show that the relationship between the deposition and post-processing parameters and material properties that are closely related to the CdS/CdTe heterojunction fabrication technology can be simplified and cost-effectively established by using this test method, and then the heterojunction interface distribution uniformity and solar cells can be obtained. The corresponding relationship of the uniformity of I-V characteristic parameters provides experimental test basis for improving the performance of solar cells.