研磨作为4H碳化硅(4H-SiC)晶片加工的重要工序之一，对4H-SiC衬底晶圆的质量具有重要影响。本文研究了金刚石磨料形貌和分散介质对4H-SiC晶片研磨过程中材料去除速率和面型参数的影响，基于研磨过程中金刚石磨料与4H-SiC晶片表面的接触情况，推导出简易的晶片材料去除速率模型。研究结果表明，磨料形貌显著影响4H-SiC晶片的材料去除速率，材料去除速率越高，晶片的总厚度变化(TTV)越小。由于4H-SiC中C面和Si面的各向异性，4H-SiC晶片研磨过程中C面的材料去除速率高于Si面。在分散介质的影响方面：水基体系研磨液的Zeta电位绝对值较高，磨料分散均匀，水的高导热系数有利于控制研磨过程中的盘面温度；乙二醇体系研磨液的Zeta电位绝对值小，磨料易发生团聚，增大研磨过程的磨料切入深度，晶片的材料去除速率提高，晶片最大划痕深度随之增大。

As one of the most important steps in machine processing of 4H-silicon carbide (4H-SiC) wafers, lapping exerts an important impact on the quality of 4H-SiC substrate wafers. In this paper, the effects of diamond abrasive morphology and dispersion medium on the material removal rate and surface parameters of 4H-SiC wafers were investigated. Based on the contact between diamond abrasive and 4H-SiC wafer surface during lapping process, a simple wafer material removal rate model was derived. It is found that the abrasive morphology significantly affects the material removal rate of 4H-SiC substrate wafers, the higher the material removal rate, the smaller the total thickness variation (TTV) is obtained for 4H-SiC substrate wafers. Due to the anisotropy of C-face and Si-face of 4H-SiC, the material removal rate of C-face is higher than that of Si-face. In terms of effect of the dispersion medium, the Zeta potential absolute value of the water-based slurry is high, and the abrasive is evenly dispersed. It is beneficial to control the disc temperature during the lapping process due to the large thermal conductivity of water. The Zeta potential absolute value of the glycol-based slurry is small, and the abrasive is prone to agglomeration. As the abrasive cutting depth deepens in lapping process, the material removal rate of 4H-SiC wafer increases, and the maximum value of scratch depth also aggravates accordingly.