Cu/SiO2混合键合技术被认为是实现芯片三维集成和高密度电学互连的理想方案,但由于其需兼顾介质和金属两种材料的键合,目前鲜有自主开发且工艺简单、成本低廉的混合键合方案的报道。文章归纳了现有的晶圆级键合技术,包括直接键合、活化键合以及金属固液互扩散键合,分析了其应用于混合键合技术的可能性。进一步总结了近年来部分Cu/SiO2混合键合技术的研究进展,从原理上剖析该工艺得以实现的关键,为国内半导体行业占领此高端领域提供一定的参考。

Cu/SiO2 hybrid bonding technology is considered as an ideal solution for 3D integration of chips and high-density electrical interconnection. Both dielectric bonding and metal bonding should be taken into consideration in such technology. Therefore, few native self-developed hybrid bonding achievements with simple process and low cost have been developed in Chinese mainland. In this paper, existing wafer level bonding technologies were summarized, including direct bonding, activated bonding and solid-liquid inter-diffusion bonding. And the possibility of their application in hybrid bonding was deeply analyzed. Moreover, recent research progresses of Cu/SiO2 hybrid bonding technologies were further summarized. Finally, the key factors to realize this technology were analyzed in principle. This review will provide a guidance for the domestic semiconductor industry to occupy this promising technical field.