一种S波段E类GaN HEMT功率放大器设计

王德勇; 张盼盼; 张金灿; 刘敏; 刘博; 孙立功

doi:doi:10.13911/j.cnki.1004-3365.210177

微电子学, 2022, 52 (1): 28, 网络出版: 2022-06-14

一种S波段E类GaN HEMT功率放大器设计

Design of a S-Band Class-E GaN HEMT Power Amplifier

论文大纲

王德勇张盼盼张金灿刘敏刘博孙立功

作者单位

河南科技大学电气工程学院, 河南洛阳 471023

宽带匹配网络 E类高效率功率放大器 broadband matching network class-E high efficiency power amplifier

摘要

并联电路E类功率放大器(PA)具有结构简单和高效的优点, 因而被广泛应用。针对并联电路E类PA存在带宽较窄、效率较低的问题, 对其输出匹配网络提出了一种改进方案。采用混合式π型结构作为PA的输出匹配网络, 在较宽的工作带宽内完成了最佳阻抗与标准阻抗的转换, 有效地抑制了二次谐波分量, 提高了电路的效率。为了验证所提出理论的有效性, 基于0.25 μm GaN HEMT工艺设计了一种结构简单、高效率和高功率的单片集成E类功率放大器。版图后仿真结果表明, 在2.5～3.7 GHz工作频率范围内, 输出功率大于40 dBm, 功率附加效率为51.8%～63.1%。版图尺寸为2.4 mm×2.9 mm。

Abstract

Since the parallel-circuit class-E power amplifier (PA) has the advantages of simple structure and high efficiency, it has been widely used in many applications. To solve the problem of narrow bandwidth and low efficiency of the parallel-circuit class-E PA, an improved technology for its output matching network was proposed in this paper. A hybrid π-type structure was used as the output matching network of the PA, which not only performed the conversion between the best impedance and the standard impedance within a wide working bandwidth, but also effectively suppressed the second harmonic component, in turn to improve the circuit’s efficiency. In order to verify the validity of the proposed theory, based on a 0.25 μm GaN HEMT process, a monolithic-integrated class-E power amplifier with simple structure, high efficiency and high power was designed in this paper. The post-layout simulation results showed that the output power was greater than 40 dBm, and the power-added efficiency was 51.8% to 63.1% in the 2.5～3.7 GHz operating frequency range. The size of layout was 2.4 mm×2.9 mm.

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王德勇, 张盼盼, 张金灿, 刘敏, 刘博, 孙立功. 一种S波段E类GaN HEMT功率放大器设计[J]. 微电子学, 2022, 52(1): 28. WANG Deyong, ZHANG Panpan, ZHANG Jincan, LIU Min, LIU Bo, SUN Ligong. Design of a S-Band Class-E GaN HEMT Power Amplifier[J]. Microelectronics, 2022, 52(1): 28.

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