Gd3(Al,Ga)5O12∶Ce晶体生长与闪烁性能研究

王海丽; 李辉; 周南浩; 石爽爽; 苏健; 张微; 陈建荣; 黄存新

人工晶体学报, 2023, 52 (12): 2156, 网络出版: 2024-01-03

Gd₃(Al,Ga)₅O₁₂∶Ce晶体生长与闪烁性能研究

Growth and Scintillation Properties of Gd₃(Al,Ga)₅O₁₂∶Ce Crystal

论文大纲

王海丽 ^1,2,*李辉 ^1,2周南浩 ^1,2石爽爽 ^1,2苏健 ²张微 ^1,2陈建荣 ^1,2黄存新 ^1,2

作者单位

¹ 北京中材人工晶体研究院有限公司，北京100018

² 中材人工晶体研究院有限公司，北京100018

闪烁晶体高温固相反应法提拉法闪烁性能 GAGG∶Ce GAGG∶Ce scintillation crystal high temperature solid state reaction method Czochralski method scintillation property

摘要

掺铈钆铝镓石榴石(Gd3(Al,Ga)5O12∶Ce，简称GAGG∶Ce)闪烁晶体是近年来发现的一种新型稀土闪烁晶体，具有光输出高、能量分辨率高、衰减时间短、无自辐射和不潮解等优点，在核医学成像、安检和环境监测等领域具有广阔的应用前景。本文报道了GAGG∶Ce晶体的提拉法生长与闪烁性能表征。利用高温固相反应法合成GAGG∶Ce原料，采用XRD对合成的原料进行了物相分析，结果表明，在1 500 ℃下煅烧12 h合成的多晶料为纯GAGG相。利用提拉法生长出尺寸50 mm×90 mm的GAGG∶Ce晶体，测试了其透过光谱、X射线激发发射光谱和脉冲高度谱，结果表明，7 mm厚样品550 nm的透过率为81.5%，晶体X射线激发发射峰中心波长位于550 nm，晶体的光输出为59 000 photons/MeV，能量分辨率为6.2%@662 keV，晶体衰减时间快分量为149 ns，慢分量为748 ns。

Abstract

Ce3+ doped gadolinium aluminum gallium garnet (GAGG∶Ce) scintillation crystal has the advantages of high light output, high energy resolution, short decay time, no self radiation and nondeliquescence, which make it has a broad application prospect in nuclear medical imaging, security inspection and environment detection et al. This paper reported the Czochralski growth and scintillation properties of GAGG∶Ce single crystal. GAGG∶Ce raw material was synthesized by high temperature solid state reaction method. By means of XRD analysis, the raw material sintered at 1 500 ℃ for 12 h is verified to be pure GAGG phase. GAGG∶Ce crystal with size of 50 mm×90 mm was successfully grown by Czochralski method. The transmission spectrum, Xray excited emission spectrum and pulse height spectrum of the crystal were tested. Results show that optical transmittance at 550 nm for the sample with thickness of 7 mm reaches as high as 81.5%. The Xray excited emission peak central wavelength of the GAGG∶Ce crystal is located at 550 nm. The light output of the GAGG∶Ce crystal is 59 000 photons/MeV and the energy resolution is 6.2%@662 keV. The decay time is 149 ns and a slow component of 748 ns.

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王海丽, 李辉, 周南浩, 石爽爽, 苏健, 张微, 陈建荣, 黄存新. Gd₃(Al,Ga)₅O₁₂∶Ce晶体生长与闪烁性能研究[J]. 人工晶体学报, 2023, 52(12): 2156. WANG Haili, LI Hui, ZHOU Nanhao, SHI Shuangshuang, SU Jian, ZHANG Wei, CHEN Jianrong, HUANG Cunxin. Growth and Scintillation Properties of Gd₃(Al,Ga)₅O₁₂∶Ce Crystal[J]. Journal of Synthetic Crystals, 2023, 52(12): 2156.

Gd₃(Al,Ga)₅O₁₂∶Ce晶体生长与闪烁性能研究

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