微电子学, 2022, 52 (4): 608, 网络出版: 2023-01-18  

一种16位高精度分段式电阻型DAC设计

A 16-bit High-Precision Segmented-Resistance DAC
作者单位
1 中国电子科技集团公司 第五十八研究所, 江苏 无锡 214000
2 西安交通大学 微电子学院, 西安 710049
摘要
采用0.5 μm BCD工艺,设计了一种16位分段式电阻型高精度DAC。根据集成电路工艺中电阻的一般失配特性,确定电阻型DAC采用“4+12”的分段结构,分别为高位温度计码结构和低位二进制码结构。整个电路中的电阻类型均采用高阻型电阻,减小了DAC开关结构中的失配,极大降低了整体功耗。电路结构紧凑,整体面积小,仅有2.397 6 mm2。结合后仿真结果,对版图进行合理调整,使电路具有较低的微分非线性(DNL),之后采用校正结构,进一步降低DNL。电路测试结果表明,输入数字信号为10 kHz的正弦波时,DAC的无杂散动态范围(SFDR)为57.72 dB,DNL为0.5 LSB,积分非线性(INL)为1 LSB,功耗为1.5 mW。
Abstract
Based on a 0.5 μm BCD technology, a 16-bit high-precision segmented-resistance digital-to-analog converter (DAC) was designed. According to the general resistance mismatch feature in integrated circuit process, the DAC had “4+12” architecture, and it was divided into temperature coding part and binary coding part. All the resistors in this DAC were high-impedance, which reduced the mismatch in the DAC switch architecture as well as its whole power dissipation. The DAC had a compact architecture and a small layout area of 2.397 6 mm2. Combined with the results after post-simulation, the layout was modified, which made the DAC have a low differential non-linearity (DNL). Moreover, its calibration part could make it lower. The test results showed that the DAC had a spurious free dynamic range of 57.72 dB, a DNL of 0.5 LSB, a INL of 1 LSB, and a power dissipation of 1.5 mW when its input was 10 kHz sine digital wave data.
参考文献

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张皓然, 焦子豪, 盛炜, 章宇新, 曹燕杰, 陈旻琦. 一种16位高精度分段式电阻型DAC设计[J]. 微电子学, 2022, 52(4): 608. ZHANG Haoran, JIAO Zihao, SHENG Wei, ZHANG Yuxin, CAO Yanjie, CHEN Minqi. A 16-bit High-Precision Segmented-Resistance DAC[J]. Microelectronics, 2022, 52(4): 608.

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