Author Affiliations
Abstract
1 School of Information Science and Engineering (ISE), Shandong University, Qingdao 266200, China
2 Neumem Co., Ltd, Hefei 230093, China
3 Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100084, China
4 Institute of Industrial Science, The University of Tokyo, Tokyo, Japan
With the rapid development of machine learning, the demand for high-efficient computing becomes more and more urgent. To break the bottleneck of the traditional Von Neumann architecture, computing-in-memory (CIM) has attracted increasing attention in recent years. In this work, to provide a feasible CIM solution for the large-scale neural networks (NN) requiring continuous weight updating in online training, a flash-based computing-in-memory with high endurance (109 cycles) and ultra-fast programming speed is investigated. On the one hand, the proposed programming scheme of channel hot electron injection (CHEI) and hot hole injection (HHI) demonstrate high linearity, symmetric potentiation, and a depression process, which help to improve the training speed and accuracy. On the other hand, the low-damage programming scheme and memory window (MW) optimizations can suppress cell degradation effectively with improved computing accuracy. Even after 109 cycles, the leakage current (Ioff) of cells remains sub-10pA, ensuring the large-scale computing ability of memory. Further characterizations are done on read disturb to demonstrate its robust reliabilities. By processing CIFAR-10 tasks, it is evident that ~90% accuracy can be achieved after 109 cycles in both ResNet50 and VGG16 NN. Our results suggest that flash-based CIM has great potential to overcome the limitations of traditional Von Neumann architectures and enable high-performance NN online training, which pave the way for further development of artificial intelligence (AI) accelerators.
NOR flash memory computing-in-memory endurance neural network online training 
Journal of Semiconductors
2024, 45(1): 012301
Author Affiliations
Abstract
1 School of Information Science and Engineering (ISE), Shandong University, Qingdao 266000, China
2 Shandong Sinochip Semiconductors Co. Ltd, Jinan 250101, China
3 Neumem Co., Ltd, Hefei 230088, China
4 Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
The “memory wall” of traditional von Neumann computing systems severely restricts the efficiency of data-intensive task execution, while in-memory computing (IMC) architecture is a promising approach to breaking the bottleneck. Although variations and instability in ultra-scaled memory cells seriously degrade the calculation accuracy in IMC architectures, stochastic computing (SC) can compensate for these shortcomings due to its low sensitivity to cell disturbances. Furthermore, massive parallel computing can be processed to improve the speed and efficiency of the system. In this paper, by designing logic functions in NOR flash arrays, SC in IMC for the image edge detection is realized, demonstrating ultra-low computational complexity and power consumption (25.5 fJ/pixel at 2-bit sequence length). More impressively, the noise immunity is 6 times higher than that of the traditional binary method, showing good tolerances to cell variation and reliability degradation when implementing massive parallel computation in the array.
in-memory computing stochastic computing NOR flash memory image edge detection 
Journal of Semiconductors
2023, 44(5): 054101
作者单位
摘要
1 湘潭大学材料科学与工程学院, 湖南湘潭 411105
2 上海精密计量测试研究所, 上海 201109
3 西北核技术研究院, 陕西西安 710024
4 中国原子能科学研究院, 北京 102488
基于中国原子能科学研究院的 HI-13加速器, 利用不同线性能量传输(LET)值的重离子束流对 4款来自不同厂家的 90 nm特征尺寸 NOR型 Flash存储器进行了重离子单粒子效应试验研究, 对这些器件的单粒子翻转(SEU)效应进行了评估。试验中分别对这些器件进行了静态和动态测试, 得到了它们在不同 LET值下的 SEU截面。结果表明高容量器件的 SEU截面略大于低容量的器件; 是否加偏置对器件的翻转截面几乎无影响; 两款国产替代器件的 SEU截面比国外商用器件高。国产替代器件 SEU效应的 LET阈值在 12.9 MeV·cm2/mg附近, 而国外商用器件 SEU效应的 LET阈值处于 12.9~32.5 MeV·cm2/mg之间。此外, 针对单粒子和总剂量效应对试验器件的协同作用也开展了试验研究, 试验结果表明总剂量累积会增加 Flash存储器的 SEU效应敏感性, 分析认为总剂量效应产生的电离作用导致了浮栅上结构中的电子丢失和晶体管阈值电压的漂移, 在总剂量效应作用的基础上 SEU更容易发生。
NOR型 Flash存储器 重离子 单粒子效应 总剂量效应 协同效应 NOR Flash memory heavy ions Single Event Effect(SEE) Total Ionizing Dose(TID) effect synergistic effects 
太赫兹科学与电子信息学报
2022, 20(9): 877

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