Author Affiliations
Abstract
1 Department of Electrical and Computer Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States
2 Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
3 HexaTech, Inc., 991 Aviation Parkway, Suite 800, Morrisville, North Carolina 27560, United States
4 Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824, United States
We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped using 193 nm deep UV excimer laser source. A laser peak was achieved from the cleaved facets at 280.3 nm with linewidth of 0.08 nm at room temperature with threshold power density of 320 kW/cm2. The emission is completely TE polarized and the side mode suppression ratio (SMSR) is measured to be around 14 dB at 450 kW/cm2.
optically pumped AlGaN UV edge emitting laser AlN substrate Opto-Electronic Advances
2020, 3(4): 04190025
1 中国科学院半导体研究所纳米光电子实验室, 北京 100083
2 中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室, 陕西 西安 710119
3 度亘激光技术(苏州)有限公司, 江苏 苏州 215123
半导体激光器从诞生至今半个世纪,在理论、实践和应用方面取得了巨大进展,占据了整体激光领域的大部分市场,广泛应用于通信网络、工业加工、医疗美容、激光传感、航空**、安全防护,以及消费电子等领域。本文在回顾国际国内早期半导体激光器发展历程的基础上,重点针对高功率泵浦源领域的GaAs基8xx nm和9xx nm半导体激光器,三维感知领域的905 nm隧道结激光器和940 nm垂直腔面发射激光器,以及光谱分析和红外感测领域的GaSb基红外激光器和InP基量子级联激光器进行了简单总结。内容包括半导体激光器的主要应用场景、所追求的主要目标、近10年国内外发展的最新进展,以及今后可能的发展趋势与方向。
激光器 半导体激光器 边发射激光器 垂直腔面发射激光器 红外激光器
1 Institute of Solid State Physics, Technical University of Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
2 King Abdulaziz University, Jeddah, Kingdom of Saudi Arabia (KSA)
A novel type of high power edge-emitting semiconductor laser (SL) with extended vertical photonic band crystal (PBC) waveguide was reviewed. Simulations predict narrow beam divergence, resulting from the thick PBC waveguide, to be independent of realistic variations of the growth parameters. Narrow ridge lasers fabricated along the simulations indeed demonstrate superior output power, narrow beam divergence, circular beam profile, excellent beam quality and very low astigmatism. Efficient fiber coupling decisive for most applications was thus eased. Stability of the laser under a wide range of operating temperature was demonstrated. Ultrashort pulses with few ps of duration at GHz repetition rates were generated by passively mode locking the lasers
semiconductor laser (SL) semiconductor laser (SL) edge-emitting laser edge-emitting laser high brightness laser high brightness laser narrow beam divergence narrow beam divergence high peak power pulses high peak power pulses Frontiers of Optoelectronics
2016, 9(2): 225
发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所, 吉林 长春 130033
对半导体激光器的发展历史和发展现状进行了综述, 并具体介绍了长春光学精密机械与物理研究所近年来在大功率半导体激光器方面所取得的主要进展,特别是在大功率半导体激光器的激光光源、垂直腔面发射激光器和新型激光器芯片等方面。
大功率 半导体激光器 边发射激光器 垂直腔面发射激光器 芯片 high power diode laser edge emitting laser vertical cavity surface emitting laser chip
安徽大学光电信息获取与控制教育部重点实验室, 安徽 合肥 230039
基于自混合现象的新型干涉技术, 由于其结构简单、低成本的优点, 目前在位移、速度、振动、距离等测量领域得到广泛应用。采用边发射半导体激光器作为激光 自混合速度测量系统的激光光源, 针对不同表面类型、采样时间、注入电流、信号处理系统对自混合 测速结果的影响进行实验研究和讨论分析。结果表明不同反馈和采样时间 (0.1 s, 1 s) 均能满足高 精度测速要求。同时, 实验中采用合适的激光工作电流 (激光器阈值电流1.1倍以上) 并结合零点控制 技术能够获得信噪比更大激光自混合测速信号。这些结论对深入分析自混合信号的产生机理以及半导体 激光自混合测量系统的优化具有参考意义。
光学测量 边发射半导体射激光器 自混合 速度测量仪 optical measurement edge emitting laser self-mixing velocimeter
1 吉林大学电子科学与工程学院,长春,130026
2 中国科学院长春光学精密机械与物理研究所,长春,130022
3 中国科学院激发态物理开放实验室,长春,130021
介绍垂直腔面发射激光器(VCSEL)的结构、特点、性能、应用以及最新进展,并对当前要解决的关键问题进行了论述.
垂直腔面发射激光器 边发射激光器 布拉格反射器 热沉 量子阱
