The energy levels and lifetimes of 3pns 3P0(n=7-35) and 3pnd 3P0 (n=6-17) series of neutral silicon are calculated and predicted by means of multichannel quantum defect theory (MQDT). In addition, the perturbation caused by core-excited state 3s3p3 is discussed. The 3pnd 3P0 series, especially 3p4d 3P0, 3p5d 3P0, and 3p6d 3P0 are perturbed strongly by the core-excited state 3s3p3 3P0. These cause the lifetime of 3pnd 3P0 (n=5-7) to be less than that of 3p4d 3P0. The lifetimes of 3p14d 3P0 (65479.14 cm-1) and 3p16d 3P0 (65608.77 cm-1) are less than that of their frontal states respectively, because these states are perturbed by 3p22s 3P0 (65476.48 cm-1) and 3p30s 3P0 (65608.99 cm-1) respectively.

在最弱受约束电子势模型的理论框架下,通过对最弱受约束电子的识别,将Martin关于单价原子量子亏损公式推广到多价原子(离子)系统,从而计算了Fe ΧⅥ离子的2p6np2P°1/2,3/2(n≥3)和2p6nd2D3/2,5/2(n≥3)系列Rydberg态的能级,理论计算值与实验值符合很好,两者的相对误差不超过3.02×10-5,达到了很高的精度.

Considering the perturbation, the results of theoretical calculation of five Rydberg series energy levels 6s2ns2S1/2(n=7-20),6s2nd2D3/2(n6-20),6s2nd2D5/2(n=6-20),6s2np2P^(0)_(1/2)(n=7-20), and 6s2np2P^(0)_(3/2)(n7-20) for Tl I are presented using the weakest bound electron potential model (WBEPM) theory. Furthermore, the radiative lifetimes of this five series are also calculated. The calculated values of energy levels and lifetimes are in good agreement with the experimental results.

Martin expression about the quantum defect of single-valence atoms is extended to many-valence atoms by identifying the weakest bound electron (WBE) under the weakest bound electron potential model (WBEPM) theory. Six Rydberg series energy levels of 2p6np2Po_(1/2) (n>3), 2p6np2Po_(3/2) (n>3), 2p6nd2D_(3/2) (n>3), 2p6nd2D_(5/2) (n>3), 2p6nf2Fo_(5/2) (n>4), and 2p6nf2Fo_(7/2) (n>4) for Ni XVIII are calculated by this method. The calculated results are in good agreement with the experimental results.

在最弱受约束电子势模型理论框架下,利用Martin公式研究了PbⅠ原子在JJ耦合下的Rydberg系列能级,计算了6pnd1/2[5/2]3(n≥6)和6png1/2[5/2]3(n≥5)两个光谱系列的能级和量子亏损值,结果与实验值符合较好,最大相对误差小于0.032%.表明该方法对jj耦合下的能级计算也是合适的.

在多通道量子数亏损理论(MQDT)的基础上,对镉原子J=1偶宇称的MQDT模型进行了分析,并利用MQDT波函数给出了计算高激发态寿命的一般方法,计算并预言了5sns 1/2[1/2]1(7≤n≤24)和5snd 1/2[3/2]1(6≤n≤23)这两个Rydberg系列的寿命,拟合出了它们的寿命计算公式:5 sns 1/2[1/2]1系列为τ=0.8980v2.755 n;5 snd 1/2[3/2]1系列为τ=0.3628v2.829 n.

根据对应原理，得到了类氢原子能态平均寿命半经典的计算公式τ(n，l)，然后利用相对论单通道量子数亏损理论进行推广，得到用来计算考虑总角动量∫的激发态寿命公式τ(n，l，l+1／2)和τ(n，l，l-1／2)，利用单通道量子数亏损理论得到了碱金属原子n、l远大于1时激发态寿命的半经典公式τ（n，l）=τ0(m+M/nm/v+M)² v⁷l(l+1/2)/n⁴,其计算结果和实验数据符合的很好。

在最弱受约束电子势模型理论框架下，通过对最弱受约束电子的识别，将Martin关于单价原子量子亏损的公式推广到了多价原子(离子)系统。本文依此计算了PbⅡ离子的几个Rydberg系列能级。结果与实验值符合较好。

在多通道量子数亏损理论 (MQDT)的基础上 ,对铅原子J =2奇宇称的MQDT模型进行了分析 ,并利用MQDT波函数给出了计算高激发态寿命的一般方法 ,计算并预言了 6 pnd 123202和 6 pnd 125202这两个Rydberg系列的寿命

用多通道量子数亏损理论,从精确的类被离子能谱数据推算出低能电子与类锂离子Al10+和Si11+的2s-2p碰撞激发截面和碰撞激发速率,并与用Mewe的内插公式计算得到的结果进行了比较,计算结果表明两者差别在百分之五以内。比较可靠的低能电子与类锂离于碰撞激发截面数据对于复合泵浦类锂离子软X射线激光和受控聚变研究具有重要作用。