激光与光电子学进展, 2019, 56 (4): 040003, 网络出版: 2019-07-31
砷化镓基近红外大功率半导体激光器的发展及应用 下载: 2783次
Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers
激光器 大功率半导体激光器 输出功率 光束质量 可靠性 lasers high power semiconductor lasers output power beam quality reliability
摘要
综述了世界各国近年来在大功率半导体激光器方面所取得的研究成果,重点介绍了砷化镓基近红外大功率半导体激光器在输出功率、亮度、电光转换效率、光束质量、寿命与可靠性方面的研究进展。结合目前市场分析,详细阐述了半导体激光器的应用前景,展望了未来大功率半导体激光器的发展趋势。
Abstract
The recent research achievements on high-power semiconductor lasers in various countries of the world are reviewed. The research progress is mainly introduced in terms of output power, brightness, electro-optical conversion efficiency, beam quality, lifetime, and reliability of GaAs-based near-infrared high-power semiconductor lasers. Combined with the current market analysis, the application prospect of these semiconductor lasers is elaborated. The development trend of high-power semiconductor lasers in the future is forecasted.
袁庆贺, 井红旗, 张秋月, 仲莉, 刘素平, 马骁宇. 砷化镓基近红外大功率半导体激光器的发展及应用[J]. 激光与光电子学进展, 2019, 56(4): 040003. Qinghe Yuan, Hongqi Jing, Qiuyue Zhang, Li Zhong, Suping Liu, Xiaoyu Ma. Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2019, 56(4): 040003.