激光与光电子学进展, 2019, 56 (4): 040003, 网络出版: 2019-07-31 复制并引用该论文  本文已被引 12 次  被引通知

图 & 表

图 1. 典型边发射半导体激光器结构示意图

Fig. 1. Structural diagram of typical edge-emitting semiconductor laser

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图 2. 900~1000 nm 波段大功率半导体激光器功率研究进展

Fig. 2. Research progress of high power semiconductor laser at 900-1000 nm

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图 3. 半导体激光器巴条示意图

Fig. 3. Schematic of semiconductor laser bar

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图 4. 半导体激光器迭阵。(a)水平迭阵;(b)垂直迭阵

Fig. 4. Semiconductor laser array. (a) Horizontal array; (b) vertical array

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图 5. 大功率半导体激光器的亮度和摩尔定律[66]

Fig. 5. High power semiconductor laser brilliance and Moore's law[66]

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图 6. nLight公司生产的光纤耦合半导体激光器的输出功率和转换效率随波长的变化

Fig. 6. Output power and conversion efficiency of fiber-coupled semiconductor lasers produced by nLight versus wavelength

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图 7. nLight公司应用于工业加工领域的千瓦级光纤激光器系统结构示意图

Fig. 7. Structural diagram of nLight kilowatt fiber laser system for industrial applications

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表 1半导体激光器单管输出功率

Table1. Output power of single-emitter semiconductor laser

Year Wavelength /nm Power /W Operationcondition Conversionefficiency /% Aperture /μm Researchunit 2007 915 14.8 CW,15 ℃ 64 100 Photonic DeviceResearch Center[14] 2009 980 24.6 CW,cooling 54 96 Ferdinand-Braun-Institute[15] 2013 915 19.8 CW,20 ℃ 68 100 HamamastsuPhotonics K.K.[16] 2013 915 15.0 CW 68 100 Ferdinand-Braun-Institute[17] 2014 880 18.8 QCW 64 95 nLight[18] 2015 950 20.0 CW 60 90 TRUMPFPhotonics[19] 2015 920 29.5 CW 61 100 JDSU[20] 2016 808 9.0 CW 63 140 Coherent[21] 2017 808 8.0 CW 64 100 Jenoptik[22] 2017 915 33.0 CW 60 220 Fujikura[13] Note:QCW is quasi-continuous work.

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表 2半导体激光器巴条输出功率及转换效率

Table2. Output power and conversion efficiency of semiconductor laser bar

Year Wavelength /nm Outputpower /W Operationcondition Conversionefficiency /% Resonatorlength /mm Fillfactor /% 2011 8xx 350 QCW,200 μs,100 Hz 62 5.0 80[30] 2014 1020 200 CW,25 ℃ 63 4.0 50[27] 2017 940 600 QCW >60 1.5 70[35] 2015 940 1980 QCW,0.2 ms,10 Hz,203 K 57 6.0 72[28] 2015 940 500 QCW,2 ms,10 Hz >60 1.5 75[31] 2015 760 100 CW >60 4.0 30[32] 2016 940 1000 QCW,1 ms,10 Hz,203 K 70 4.0 75[33] 2016 808 80 CW 63 2.0 28[21] 2017 80x 210 QCW,200 μs,20 Hz 70 5.0 72[34] 2017 808 106 CW 68 1.5 50[29] 2018 1060 500 QCW 75 2.0 76[36]

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表 3日本Hamamatsu公司的半导体激光器bar条模块参数

Table3. Parameters of Japanese Hamamatsu semiconductor laser bar module

Product type Wavelength /nm Output power /W Operation current /A Beam quality factor atpulse peak of 1 /e-2 L13713-25P940 940 10000 310 15°×58° L11398-16P808 808 1600 105 10°×40° L11398-16P940 940 1600 100 10°×40°

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表 4高亮度宽条半导体激光器的亮度概况

Table4. Brightness overview of high-brightness wide stripe semiconductor laser

Year Wavelength /nm Brilliance /(W·mm-1·mrad-1) Research unit 2013 710 1.4 NUSOD institute[41] 2014 969 3.5 FBH research institute[43] 2014 970 2.5 Fraunhofer[44] 2015 970 5.6 FBH research institute[45] 2017 915 4.3 nLight[46]

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表 5Laserline公司LDM和LDF系列激光器的参数

Table5. Parameters of Laserline LDM and LDF series lasers

Series Wavelengthrange /nm Maximum outputpower /kW Beam quality /(mm·mrad) Optical fiberdiameter /μm Numericalaperture NA Minimum focusat f=150 mm·μm-1 1.0 20 400 0.1 300 2.5 30 600 0.1 450 LDM 3.5 40 400 0.2 600 5.0 60 600 0.2 900 6.0 100 1000 0.2 1500 7.0 30 600 0.1 450 9.0 40 400 0.2 600 LDF 900-1080 15 60 600 0.2 900 20 100 1000 0.2 1500 25 200 2000 0.2 3000

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表 6半导体激光器单管的寿命

Table6. Life of semiconductor laser single emitter

Research unit Year Wavelength /nm Life expectancy Japanese Fujikura 2015 915 12 W,1.088×106 h[85] Japanese Hamamatsu 2015 915 13 W, 25 ℃,6.8×105 h[86] German Direct Photonics 2015 976 1×105 h[87] Russian MIREA 2016 1060 6×104 h[88] Japanese Mitsubishi Electrics 2018 976 1×105 h[89]

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表 7半导体激光器巴条的寿命

Table7. Semiconductor laser bar life

Research unit Year Wavelength /nm Life expectancy German Jenoptik 2015 940 200 W,2×104 h[90] German Jenoptik 2017 808 24 ℃,100 A,140 W,2×104 h[91] German Trumpf 2018 938 25 ℃,300 W,1×104 h[31]

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袁庆贺, 井红旗, 张秋月, 仲莉, 刘素平, 马骁宇. 砷化镓基近红外大功率半导体激光器的发展及应用[J]. 激光与光电子学进展, 2019, 56(4): 040003. Qinghe Yuan, Hongqi Jing, Qiuyue Zhang, Li Zhong, Suping Liu, Xiaoyu Ma. Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2019, 56(4): 040003.