人工晶体学报, 2020, 49 (4): 570, 网络出版: 2020-06-15   

高品质6英寸N型4H-SiC单晶生长研究

Study on the Growth of High Quality 6-Inch N-type 4H-SiC Single Crystal
作者单位
1 西安理工大学自动化与信息工程学院,西安 710048
2 中科钢研节能科技有限公司,北京 100081
3 西安市电力电子器件与高效电能变换重点实验室, 西安 710048
引用该论文

刘兵, 蒲红斌, 赵然, 赵子强, 鲍慧强, 李龙远, 李晋, 刘素娟. 高品质6英寸N型4H-SiC单晶生长研究[J]. 人工晶体学报, 2020, 49(4): 570.

LIU Bing, PU Hongbin, ZHAO Ran, ZHAO Ziqiang, BAO Huiqiang, LI Longyuan, LI Jin, LIU Sujuan. Study on the Growth of High Quality 6-Inch N-type 4H-SiC Single Crystal[J]. Journal of Synthetic Crystals, 2020, 49(4): 570.

参考文献

[1] 陈治明.半导体概论[M].北京:电子工业出版社,2008:89-90.

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[3] Yakimova R, Syvajarvi M, Iakimov T, et al. Polytype stability in seeded sublimation growth of 4H-SiC boubles[J].Journal of Crystal Growth,2000,217(3):255-262.

[4] Avrov D D, Bulatov A V, Dorozhkin S I, et al. Defect formation in silicon carbide large-scale ingots grown by sublimation technique[J].Journal of Crystal Growth,2005,275:4,85-489.

[5] Dmitriev V, Rendakova S, Kuznetsov N, et al. Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density[J].Mater. Sci. Eng. B,1999,61-62:446-449.

[6] Cherednichenko D I, Drachev R V, Khlebnikov I, et al. Thermal stress as the major factor of defect generation in SiC during PVT growth[J].Materials Research Society,2003,742:1812-1816.

[7] Zhang Z B, Lu J, Chen Q S. Thermoelastic stresses in SiC single crystals grown by the physical vapor transport method[J].Acta Mechanica Sinica,2006,22:40-45.

[8] Herro Z G, Epelbaum B M, Bickermann M, et al. Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient[J].Journal of Crystal Growth,2004,262:105-112.

[9] 封先锋,陈治明,蒲红斌.SiC晶体的PVT生长系统及测温盲孔对热场的影响[J].人工晶体学报,2010,39(3):741-746.

[10] Nakabayashi M, Fujimoto T, Katsuno M, et al. Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities[J].Materials Science Forum,2009,600-603:3-6.

[11] 王 丽,胡小波,董 捷,等.Micro-Raman光谱鉴定碳化硅单晶的多型结构[J].功能材料,2004,35(增刊):3400-3404.

刘兵, 蒲红斌, 赵然, 赵子强, 鲍慧强, 李龙远, 李晋, 刘素娟. 高品质6英寸N型4H-SiC单晶生长研究[J]. 人工晶体学报, 2020, 49(4): 570. LIU Bing, PU Hongbin, ZHAO Ran, ZHAO Ziqiang, BAO Huiqiang, LI Longyuan, LI Jin, LIU Sujuan. Study on the Growth of High Quality 6-Inch N-type 4H-SiC Single Crystal[J]. Journal of Synthetic Crystals, 2020, 49(4): 570.

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