热退火处理对氧化铟锡薄膜光电特性的影响

肖和平; 郭冠军; 马祥柱; 张双翔

doi:doi:10.3788/lop54.013102

激光与光电子学进展, 2017, 54 (1): 013102, 网络出版: 2017-01-17

热退火处理对氧化铟锡薄膜光电特性的影响下载： 1506次

Influence of Thermal Annealing on Photoelectrical Properties of Indium-Tin Oxide Thin Films

论文大纲

肖和平 ^*郭冠军马祥柱张双翔

作者单位

扬州乾照光电有限公司, 江苏扬州 225101

薄膜氧化铟锡薄膜快速热退火微结构光电特性 thin films indium-tin oxide film rapid thermal annealing micro structure photoelectrical properties

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摘要

应用电子束蒸镀氧化铟锡(ITO)薄膜, 在氮气环境中对ITO膜进行不同温度下快速热退火(RTA)处理。采用X射线衍射仪(XRD)、X射线光电子能谱(XPS)技术、扫描电子显微镜(SEM)、可见光分光谱仪、四探针测试仪测试了快速热退火处理对电子束蒸镀制备ITO薄膜的晶向、微结构、组分、光电特性的影响。分析结果表明, 退火温度升高, 有利于Sn释放5s轨道上的电子, Sn4+取代In3+形成新的化学键。此外, 退火温度升高还提升了Sn、In原子的结合能, 改变了Sn、In的氧化程度, 增加了ITO薄膜晶体的载流子浓度和迁移率, 改善了ITO薄膜晶体晶格畸变、缺陷密度与致密性, 促进晶格失配的恢复。在450 ℃温度下快速热退火可获得光电特性较好的ITO薄膜。

Abstract

Indium-tin oxide (ITO) thin films are deposited by electron beam evaporation and treated by rapid thermal annealing (RTA) under nitrogen. The influences of RTA treatment on crystal orientation, microstructure, composition and photoelectric properties of ITO thin films are measured by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), visible spectrophotometer and four-probe meter. The analysis results show that the rise of annealing temperature is helpful for Sn to release electrons on the 5s orbit, and Sn4+ to replace In3+ to form a new chemical bond. Moreover, the binding energy of In and Sn elements is increased, their degree of oxidation is changed, and the electron carrier concentration and mobility are increased. Besides, the crystal lattice distortion of ITO thin films, the defect density and compactness are ameliorated, and the recovery of the lattice mismatch is promoted. In the experience of 450 ℃ RTA, preferable photoelectric properties of ITO thin films can be obtained.

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肖和平, 郭冠军, 马祥柱, 张双翔. 热退火处理对氧化铟锡薄膜光电特性的影响[J]. 激光与光电子学进展, 2017, 54(1): 013102. Xiao Heping, Guo Guanjun, Ma Xiangzhu, Zhang Shuangxiang. Influence of Thermal Annealing on Photoelectrical Properties of Indium-Tin Oxide Thin Films[J]. Laser & Optoelectronics Progress, 2017, 54(1): 013102.

热退火处理对氧化铟锡薄膜光电特性的影响下载： 1506次

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