AlGaN基深紫外发光二极管空穴注入效率的提高途径 下载: 2247次封面文章
田康凯, 楚春双, 毕文刚, 张勇辉, 张紫辉. AlGaN基深紫外发光二极管空穴注入效率的提高途径[J]. 激光与光电子学进展, 2019, 56(6): 060001.
Kangkai Tian, Chunshuang Chu, Wengang Bi, Yonghui Zhang, Zihui Zhang. Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes[J]. Laser & Optoelectronics Progress, 2019, 56(6): 060001.
[21] Sharma T K, Naveh D, Towe E. Strain-driven light-polarization switching in deep ultraviolet nitride emitters[J]. Physical Review B, 2011, 84(3): 035305.
[23] 胡永禄, 刘道柳, 王博, 等. 表面微腔光子晶体LED的光提取特性[J]. 光学学报, 2017, 37(6): 0623004.
[24] 刘顺瑞, 王丽, 孙艳军, 等. 利用截头圆锥形仿生蛾眼结构提高LED光提取效率[J]. 光学学报, 2018, 38(1): 0122001.
[35] Park J S, Kim J K, Cho J, et al. Review: Group III-nitride-based ultraviolet light-emitting diodes: Ways of increasing external quantum efficiency[J]. ECS Journal of Solid State Science and Technology, 2017, 6(4): Q42-Q52.
[38] Piprek J. Efficiency droop in nitride-based light-emitting diodes[J]. Physica Status Solidi (a), 2010, 207(10): 2217-2225.
[39] Zhang Z H, Zhang Y H, Bi W G, et al. On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates[J]. Physica Status Solidi (a), 2016, 213(12): 3078-3102.
[40] Schubert EF. Light Emitting Diodes[M]. 2nd ed. England: Cambridge University Press, 2006.
[41] Miller D A B, Chemla D S, Damen T C, et al. . Band-edge electroabsorption in quantum well structures: The quantum-confined stark effect[J]. Physical Review Letters, 1984, 53(22): 2173.
[42] Schwarz U T, Braun H, Kojima K, et al. Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells[J]. Applied Physics Letters, 2007, 91(12): 123503.
[43] Chichibu S F, Yamaguchi H, Zhao L, et al. Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy[J]. Applied Physics Letters, 2008, 93(15): 151908.
[44] Masui H, Nakamura S, Denbaars S P, et al. Nonpolar and semipolar III-nitride light-emitting diodes: Achievements and challenges[J]. IEEE Transactions on Electron Devices, 2010, 57(1): 88-100.
[45] Kim D S, Lee S, Young Kim D, et al. Highly stable blue-emission in semipolar (11-22) InGaN/GaN multi-quantum well light-emitting diode[J]. Applied Physics Letters, 2013, 103(2): 021111.
[46] Chang J Y, Kuo Y K. Influence of polarization-matched AlGaInN barriers in blue InGaN light-emitting diodes[J]. Optics Letters, 2012, 37(9): 1574-1576.
[47] Ryou J H, Limb J, Lee W, et al. Effect of silicon doping in the quantum-well barriers on the electrical and optical properties of visible green light-emitting diodes[J]. IEEE Photonics Technology Letters, 2008, 20(21): 1769-1771.
[48] Fiorentini V, Bernardini F, Della Sala F, et al. Effects of macroscopic polarization in III-V nitride multiple quantum wells[J]. Physical Review B, 1999, 60(12): 8849.
[49] Zhang Z H, Tan S T, Ju Z G, et al. On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes[J]. Journal of Display Technology, 2013, 9(4): 226-233.
[50] Zhang Z H, Liu W, Ju Z G, et al. Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers[J]. Applied Physics Letters, 2014, 104(24): 243501.
[51] Cho J, Schubert E F, Kim J K. Efficiency droop in light-emitting diodes: Challenges and countermeasures[J]. Laser & Photonics Reviews, 2013, 7(3): 408-421.
[52] Katsuragawa M, Sota S, Komori M, et al. 189-[J]. Mg in AlGaN. Journal of Crystal Growth, 1998, 190: 528-531.
[53] Simon J, Protasenko V, Lian C, et al. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures[J]. Science, 2010, 327(5961): 60-64.
[54] Schubert E F, Grieshaber W, Goepfert I D. Enhancement of deep acceptor activation in semiconductors by superlattice doping[J]. Applied Physics Letters, 1996, 69(24): 3737-3739.
[55] Kumakura K, Makimoto T, Kobayashi N. Efficient hole generation above 10 19 cm -3 in Mg-doped InGaN/GaN superlattices at room temperature [J]. Japanese Journal of Applied Physics, 2000, 39(3AB): L195-L196.
[56] Jo M, Maeda N, Hirayama H. Enhanced light extraction in 260 nm light-emitting diode with a highly transparent p-AlGaN layer[J]. Applied Physics Express, 2016, 9(1): 012102.
[57] Li L P, Shi Q, Tian K K, et al. A dielectric-constant-controlled tunnel junction for III-nitride light-emitting diodes[J]. Physica Status Solidi (a), 2017, 214(6): 1600937.
[58] Zhang Z H, Li L P, Zhang Y H, et al. On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes[J]. Optics Express, 2017, 25(14): 16550-16559.
[59] Zhang Z H. Huang Chen S W, Zhang Y H, et al. Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes[J]. ACS Photonics, 2017, 4(7): 1846-1850.
[60] Neugebauer S, Hoffmann M P, Witte H, et al. All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications[J]. Applied Physics Letters, 2017, 110(10): 102104.
[61] Jeon S R, Song Y H, Jang H J, et al. Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions[J]. Applied Physics Letters, 2001, 78(21): 3265-3267.
[62] Krishnamoorthy S, Nath D N, Akyol F, et al. Polarization-engineered GaN/InGaN/GaN tunnel diodes[J]. Applied Physics Letters, 2010, 97(20): 203502.
[63] Zhang Z H, Tiam Tan S, Kyaw Z, et al. InGaN/GaN light-emitting diode with a polarization tunnel junction[J]. Applied Physics Letters, 2013, 102(19): 193508.
[64] Krishnamoorthy S, Akyol F, Rajan S. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes[J]. Applied Physics Letters, 2014, 105(14): 141104.
[65] Fiorentini V, Bernardini F, Ambacher O. Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures[J]. Applied Physics Letters, 2002, 80(7): 1204-1206.
[66] Li L P, Zhang Y H, Tian K K, et al. Numerical investigations on the n +-GaN/AlGaN/p +-GaN tunnel junction for III-nitride UV light-emitting diodes [J]. Physica Status Solidi (a), 2017, 214(12): 1700624.
[67] Zhang Z H, Tan S T, Liu W, et al. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer[J]. Optics Express, 2013, 21(4): 4958-4969.
[68] 朱海涛, 傅仁利, 费盟, 等. 铝/氧化铝复合基板封装的LED光源的光热特性[J]. 光学学报, 2017, 37(10): 1023002.
[69] Kuo Y K, Chang J Y, Chen F M, et al. Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes[J]. IEEE Journal of Quantum Electronics, 2016, 52(4): 3300105.
[70] Zhang Z H, Liu W, Tan S T, et al. A hole accelerator for InGaN/GaN light-emitting diodes[J]. Applied Physics Letters, 2014, 105(15): 153503.
[71] Zhang Z H, Zhang Y H, Bi W G, et al. On the hole accelerator for III-nitride light-emitting diodes[J]. Applied Physics Letters, 2016, 108(15): 151105.
[72] Yun Y Z, Yi A Y. Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer[J]. Applied Physics Letters, 2011, 99(22): 221103.
[73] Li Y, Chen S C, Tian W, et al. Advantages of AlGaN-based 310-nm UV light-emitting diodes with al content graded AlGaN electron blocking layers[J]. IEEE Photonics Journal, 2013, 5(4): 8200309.
[74] Zhang Z H. Huang Chen S W, Chu C S, et al. Nearly efficiency-droop-free AlGaN-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high mg doping efficiency[J]. Nanoscale Research Letters, 2018, 13: 122.
[75] Su C Y, Tu C G, Liu W H, et al. Enhancing the hole-injection efficiency of a light-emitting diode by increasing mg doping in the p-AlGaN electron-blocking layer[J]. IEEE Transactions on Electron Devices, 2017, 64(8): 3226-3233.
[76] Zhang Z H, Ju Z G, Liu W, et al. Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering[J]. Optics Letters, 2014, 39(8): 2483-2486.
[77] Chu C S, Tian K K, Fang M Q, et al. Structural design and optimization of deep-ultraviolet light-emitting diodes with AlxGa1-xN/AlyGa1-yN/AlxGa1-xN(x>y) p-electron blocking layer[J]. Journal of Nanophotonics, 2018, 12(4): 043503.
[78] Chu C S, Tian K K, Fang M Q, et al. On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN(x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes[J]. Superlattices and Microstures, 2018, 113: 472-477.
[79] Tian K K, Chu C S, Shao H, et al. On the polarization effect of the p-EBL/p-AlGaN/p-GaN structure for AlGaN-based deep-ultraviolet light-emitting diodes[J]. Superlattices and Microstructures, 2018, 122: 280-285.
[80] Meyaard D S, Lin G B, Ma M, et al. GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection[J]. Applied Physics Letters, 2013, 103: 201112.
[81] Kim S J, Kim T G. Deep-ultraviolet AlGaN light-emitting diodes with variable quantum well and barrier widths[J]. Physica Status Solidi (a), 2014, 211(3): 656-660.
[82] Tsai M C, Yen S H, Kuo Y K. Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers[J]. Applied Physics Letters, 2011, 98(11): 111114.
[83] Zhang Z H, Chu C S, Chiu C H, et al. UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections[J]. Optics Letters, 2017, 42(21): 4533-4536.
田康凯, 楚春双, 毕文刚, 张勇辉, 张紫辉. AlGaN基深紫外发光二极管空穴注入效率的提高途径[J]. 激光与光电子学进展, 2019, 56(6): 060001. Kangkai Tian, Chunshuang Chu, Wengang Bi, Yonghui Zhang, Zihui Zhang. Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes[J]. Laser & Optoelectronics Progress, 2019, 56(6): 060001.