退火温度对铝掺杂氧化锌薄膜晶体质量及光电性能的影响

郭德双; 陈子男; 王登魁; 唐吉龙; 方铉; 房丹; 林逢源; 王新伟; 魏志鹏

doi:doi:10.3788/CJL201946.0403002

中国激光, 2019, 46 (4): 0403002, 网络出版: 2019-05-09

退火温度对铝掺杂氧化锌薄膜晶体质量及光电性能的影响下载： 1435次

Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film

郭德双 ^1,*陈子男 ¹王登魁 ^1,*唐吉龙 ¹方铉 ¹房丹 ¹林逢源 ¹王新伟 ²魏志鹏 ¹

作者单位

¹ 长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022

² 长春理工大学材料科学与工程学院, 吉林长春 130022

引用该论文

郭德双, 陈子男, 王登魁, 唐吉龙, 方铉, 房丹, 林逢源, 王新伟, 魏志鹏. 退火温度对铝掺杂氧化锌薄膜晶体质量及光电性能的影响[J]. 中国激光, 2019, 46(4): 0403002.

Deshuang Guo, Zinan Chen, Dengkui Wang, Jilong Tang, Xuan Fang, Dan Fang, Fengyuan Lin, Xinwei Wang, Zhipeng Wei. Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film[J]. Chinese Journal of Lasers, 2019, 46(4): 0403002.

参考文献

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郭德双, 陈子男, 王登魁, 唐吉龙, 方铉, 房丹, 林逢源, 王新伟, 魏志鹏. 退火温度对铝掺杂氧化锌薄膜晶体质量及光电性能的影响[J]. 中国激光, 2019, 46(4): 0403002. Deshuang Guo, Zinan Chen, Dengkui Wang, Jilong Tang, Xuan Fang, Dan Fang, Fengyuan Lin, Xinwei Wang, Zhipeng Wei. Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film[J]. Chinese Journal of Lasers, 2019, 46(4): 0403002.

退火温度对铝掺杂氧化锌薄膜晶体质量及光电性能的影响下载： 1435次

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