中国激光, 2019, 46 (4): 0403002, 网络出版: 2019-05-09
退火温度对铝掺杂氧化锌薄膜晶体质量及光电性能的影响 
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Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film
图 & 表
图 1. 不同温度退火后AZO薄膜的XRD谱(插图为ZnO(101)晶面FWHM随退火温度的变化)
Fig. 1. XRD patterns of AZO film annealed at different temperatures (the illustration shows the change of FWHM of ZnO (101) crystal face with annealing temperature)
图 2. 不同温度退火后AZO薄膜的AFM图。(a)未退火;(b) 300 ℃退火;(c) 400 ℃退火;(d) 500 ℃退火;(e) 600 ℃退火
Fig. 2. AFM images of AZO thin film annealed at different temperatures. (a) Unannealed sample; (b) annealed at 300 ℃; (c) annealed at 400 ℃; (d) annealed at 500 ℃; (e) annealed at 600 ℃
图 3. 退火温度与载流子浓度、迁移率的关系
Fig. 3. Carrier concentration and mobility ratio of AZO thin films as a function of annealing temperature
郭德双, 陈子男, 王登魁, 唐吉龙, 方铉, 房丹, 林逢源, 王新伟, 魏志鹏. 退火温度对铝掺杂氧化锌薄膜晶体质量及光电性能的影响[J]. 中国激光, 2019, 46(4): 0403002. Deshuang Guo, Zinan Chen, Dengkui Wang, Jilong Tang, Xuan Fang, Dan Fang, Fengyuan Lin, Xinwei Wang, Zhipeng Wei. Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film[J]. Chinese Journal of Lasers, 2019, 46(4): 0403002.
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