预辅Al及AlN缓冲层厚度对GaN/Si(111)材料特性的影响
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廉瑞凯, 李林, 范亚明, 王勇, 邓旭光, 张辉, 冯雷, 朱建军, 张宝顺. 预辅Al及AlN缓冲层厚度对GaN/Si(111)材料特性的影响[J]. 中国激光, 2013, 40(1): 0106001. Lian Ruikai, Li Lin, Fan Yaming, Wang Yong, Deng Xuguang, Zhang Hui, Feng Lei, Zhu Jianjun, Zhang Baoshun. Effects of AlN Buffer Layer Thickness and Al Pre-Treatment on Properties of GaN/Si(111) Epilayer[J]. Chinese Journal of Lasers, 2013, 40(1): 0106001.
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