液晶与显示, 2016, 31 (6): 558, 网络出版: 2016-11-14
氧分压对铟镓锌氧薄膜晶体管性能影响
Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor
基本信息
DOI: | 10.3788/yjyxs20163106.0558 |
中图分类号: | TNT21.5 |
栏目: | 材料与器件 |
项目基金: | -- |
收稿日期: | 2016-01-15 |
修改稿日期: | 2016-02-10 |
网络出版日期: | 2016-11-14 |
通讯作者: | 孙建明 (sunjianming@boe.com.cn) |
备注: | -- |
孙建明, 周婷婷, 任庆荣, 胡合合, 陈宁, 宁策, 王路, 刘文渠, 李东升. 氧分压对铟镓锌氧薄膜晶体管性能影响[J]. 液晶与显示, 2016, 31(6): 558. SUN Jian-ming, ZHOU Ting-ting, REN Qing-rong, HU He-he, CHEN Ning, NING Ce, WANG Lu, LIU Weng-qu, LI Dong-seng. Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(6): 558.