液晶与显示, 2016, 31 (6): 558, 网络出版: 2016-11-14
氧分压对铟镓锌氧薄膜晶体管性能影响
Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor
铟镓锌氧薄膜晶体管 氧分压 阈值电压漂移 电子积累层 indium gallium zinc oxide thin film transistor oxygen partial pressure shift of threshold voltage electron accumulation layer
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孙建明, 周婷婷, 任庆荣, 胡合合, 陈宁, 宁策, 王路, 刘文渠, 李东升. 氧分压对铟镓锌氧薄膜晶体管性能影响[J]. 液晶与显示, 2016, 31(6): 558. SUN Jian-ming, ZHOU Ting-ting, REN Qing-rong, HU He-he, CHEN Ning, NING Ce, WANG Lu, LIU Weng-qu, LI Dong-seng. Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(6): 558.