液晶与显示, 2016, 31 (6): 558, 网络出版: 2016-11-14  

氧分压对铟镓锌氧薄膜晶体管性能影响

Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor
作者单位
京东方科技集团股份有限公司, 北京 100176
引用该论文

孙建明, 周婷婷, 任庆荣, 胡合合, 陈宁, 宁策, 王路, 刘文渠, 李东升. 氧分压对铟镓锌氧薄膜晶体管性能影响[J]. 液晶与显示, 2016, 31(6): 558.

SUN Jian-ming, ZHOU Ting-ting, REN Qing-rong, HU He-he, CHEN Ning, NING Ce, WANG Lu, LIU Weng-qu, LI Dong-seng. Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(6): 558.

参考文献

[1] NOMURA K, HIROMICHI O, AKIHIRO T, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J]. Nature, 2004, 432(7016): 488-492.

[2] TSUBUKU M, WATANABE R, ISHIHARA N, et al. 16.1: Negative-Bias photo degradation mechanism in InGaZnO TFT [J]. Sid Symposium Digest of Technical Papers, 2013, 44(1): 166-169.

[3] KAMIYA T, NOMURA K, HOSONO H. TOPICAL REVIEW: Present status of amorphous In-Ga-Zn-O thin-film transistors [J]. Science and Technology of Advanced Materials, 2010, 11(4): 044305.

[4] KANG D H, LIM H, KIM C, et al. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J]. Applied Physics Letters, 2007, 90(19): 192101.

[5] PARK J S, JEONG J K, CHUNG H J, et al. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water [J]. Applied Physics Letters, 2008, 92(7): 072104.

[6] JEONG J K, YANG H W, JEONG J H, et al. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J]. Applied Physics Letters, 2008, 93(12): 123508.

[7] NOMURA K, KAMIYA T, OHTA H, et al. Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing [J]. Applied Physics Letters, 2008, 93(19): 192107.

[8] 施敏, 伍国珏. 半导体器件物理[M]. 耿莉, 张瑞智, 译.西安: 西安交通大学出版社, 2008: 238-239.

    SZE S M, NG K K. Physics of Semiconductor Devices [M]. GENG L, ZHANG R Z, trans. Xi’an: Xi’an Jiaotong University Press, 2008: 238-239. (in Chinese)

[9] SURESH A, GOLLAKOTA P, WELLENIUS P, et al. Transparent, high mobility InGaZnO thin films deposited by PLD [J]. Thin Solid Films, 2008, 516(7): 1326-1329.

[10] 刘恩科. 半导体物理学[M]. 北京: 电子工业出版社, 2011: 213-214.

    LIU E K. The Physics of Semiconductors[M].Beijing: Publishing House of Electronics Industry, 2011: 213-214.(in Chinese)

[11] SURESH A, MUTH J F. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors [J]. Applied Physics Letters, 2008, 92(3): 033502.

[12] QIAN H M, YU, LU H, et al. Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors [J]. Chinese Physics B, 2015, 24(7): 077307.

孙建明, 周婷婷, 任庆荣, 胡合合, 陈宁, 宁策, 王路, 刘文渠, 李东升. 氧分压对铟镓锌氧薄膜晶体管性能影响[J]. 液晶与显示, 2016, 31(6): 558. SUN Jian-ming, ZHOU Ting-ting, REN Qing-rong, HU He-he, CHEN Ning, NING Ce, WANG Lu, LIU Weng-qu, LI Dong-seng. Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(6): 558.

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