氧分压对铟镓锌氧薄膜晶体管性能影响
孙建明, 周婷婷, 任庆荣, 胡合合, 陈宁, 宁策, 王路, 刘文渠, 李东升. 氧分压对铟镓锌氧薄膜晶体管性能影响[J]. 液晶与显示, 2016, 31(6): 558.
SUN Jian-ming, ZHOU Ting-ting, REN Qing-rong, HU He-he, CHEN Ning, NING Ce, WANG Lu, LIU Weng-qu, LI Dong-seng. Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(6): 558.
[1] NOMURA K, HIROMICHI O, AKIHIRO T, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J]. Nature, 2004, 432(7016): 488-492.
[2] TSUBUKU M, WATANABE R, ISHIHARA N, et al. 16.1: Negative-Bias photo degradation mechanism in InGaZnO TFT [J]. Sid Symposium Digest of Technical Papers, 2013, 44(1): 166-169.
[3] KAMIYA T, NOMURA K, HOSONO H. TOPICAL REVIEW: Present status of amorphous In-Ga-Zn-O thin-film transistors [J]. Science and Technology of Advanced Materials, 2010, 11(4): 044305.
[4] KANG D H, LIM H, KIM C, et al. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J]. Applied Physics Letters, 2007, 90(19): 192101.
[5] PARK J S, JEONG J K, CHUNG H J, et al. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water [J]. Applied Physics Letters, 2008, 92(7): 072104.
[6] JEONG J K, YANG H W, JEONG J H, et al. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J]. Applied Physics Letters, 2008, 93(12): 123508.
[7] NOMURA K, KAMIYA T, OHTA H, et al. Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing [J]. Applied Physics Letters, 2008, 93(19): 192107.
[8] 施敏, 伍国珏. 半导体器件物理[M]. 耿莉, 张瑞智, 译.西安: 西安交通大学出版社, 2008: 238-239.
SZE S M, NG K K. Physics of Semiconductor Devices [M]. GENG L, ZHANG R Z, trans. Xi’an: Xi’an Jiaotong University Press, 2008: 238-239. (in Chinese)
[9] SURESH A, GOLLAKOTA P, WELLENIUS P, et al. Transparent, high mobility InGaZnO thin films deposited by PLD [J]. Thin Solid Films, 2008, 516(7): 1326-1329.
[10] 刘恩科. 半导体物理学[M]. 北京: 电子工业出版社, 2011: 213-214.
LIU E K. The Physics of Semiconductors[M].Beijing: Publishing House of Electronics Industry, 2011: 213-214.(in Chinese)
[11] SURESH A, MUTH J F. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors [J]. Applied Physics Letters, 2008, 92(3): 033502.
[12] QIAN H M, YU, LU H, et al. Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors [J]. Chinese Physics B, 2015, 24(7): 077307.
孙建明, 周婷婷, 任庆荣, 胡合合, 陈宁, 宁策, 王路, 刘文渠, 李东升. 氧分压对铟镓锌氧薄膜晶体管性能影响[J]. 液晶与显示, 2016, 31(6): 558. SUN Jian-ming, ZHOU Ting-ting, REN Qing-rong, HU He-he, CHEN Ning, NING Ce, WANG Lu, LIU Weng-qu, LI Dong-seng. Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(6): 558.